采用高压NMP实现全自动去胶技术  

High Pressure NMP to Realize Automatic Lift-off Technology

作　　者：王冲[1] 汪钢[1] 

机构地区：[1]沈阳芯源微电子设备有限公司,辽宁沈阳110168

出　　处：《电子工业专用设备》2014年第5期11-14,共4页Equipment for Electronic Products Manufacturing

摘　　要：LED加工工序中,需要对晶圆表面进行去胶处理。针对LED去胶工序研究了一种去胶方法,并开发出了一种享有专利的晶圆表面金属剥离及光刻胶去除工艺及自动去胶设备,该工艺方法可去除LED表面金属层及光刻胶,并且将人工去胶的三道工艺程序整合到一起。采用该方法的全自动去胶设备,通过实验比对,能够达到良好的LED晶圆去胶良率。结尾列出了利用该方法与目前常见的人工去胶相比的多种优点。In LED manufacturing process, the wafer surface need to be deal with lift-off process. Aimed LED lift-off process, develop a lift-off technology method, and developed a patented technology and equipment which can realize wafer surface＇s metal lift-off and photoresist removing; this method can remove LED surface metal layer and photoresist and can integrate artificial lift-off three technology processes together. The equipment adopted this lift-off technology, through the experiment comparison, can achieve good LED wafer lift-off yield. Several advantages of this method compared with artificial lift-off technology are demonstrated here.

关 键 词：发光二极管 N-甲基吡咯烷酮 金属剥离 去胶 清洗技术 剥离 金属回收 

分 类 号：TN305[电子电信—物理电子学]