低辐射DGS及其串扰分析  

Crosstalk Analysis of the Defected Ground Structure with Low Radiation

作　　者：于良慧 顾长青[1] 

机构地区：[1]南京航空航天大学电子信息工程学院,南京210016

出　　处：《微波学报》2014年第3期28-31,共4页Journal of Microwaves

基　　金：国家自然科学基金(60971048)

摘　　要：在传统哑铃形缺陷接地结构（DGS）的基础上,设计出一种新型低辐射DGS。该结构既具有传统DGS的优良电路性能,又大大降低了由于接地面蚀刻缺陷图案而引起的无意辐射。进一步仿真分析了低辐射DGS的串扰,结果表明低辐射DGS近端串扰峰值电压较哑铃形DGS下降60%,远端串扰峰值电压下降了36.8%,证明低辐射DGS能大大降低由于DGS的应用对周围电路产生的影响。与接地面完整的平行微带线相比,低辐射DGS近端串扰略大,但远端串扰在4~6 GHz频段内存在阻带,当受扰线工作在远端串扰的阻带频段内,对远端串扰的抑制效果十分明显。A new defected ground structure with low radiation is proposed in this paper. The proposed DGS structure has the same property as the traditional DGS structure, and it also provides much lower radiation than the traditional DGS structure. In this paper crosstalk of the new DGS will be simulated to prove the radiation can be reduced greatly. The results show that the peak voltage of the near end crosstalk of the DGS with low radiation have dropped 60% compared with the dumbbell shaped DGS, and the peak voltage of the far end crosstalk have dropped 36.8% . Compared to the Coupling mi- crostrip line of an unbroken ground, the near end crosstalk of the DGS with Low radiation is larger slightly, but the far end erosstalk has a stopband ranged from 4GHz to 6GHz, and when the victim circuits work in the frequency range , the far end crosstalk will be suppressed obviously.

关 键 词：缺陷接地结构(DGS) 低辐射 微波电路 串扰 

分 类 号：TN811[电子电信—信息与通信工程]