Operation methods of resistive random access memory  

作　　者：WANG Guo Ming LONG Shi Bing ZHANG Mei Yun LI Yang XU Xiao Xin LIU Hong Tao WANG Ming SUN Peng Xiao SUN Hai Tao LIU Qi Lü Hang Bing YANG Bao He LIU Ming 

机构地区：[1]Tianjin Key Laboratory of Film Electronic and Communication Devices, Tianjin University of Technology [2]Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences

出　　处：《Science China(Technological Sciences)》2014年第12期2295-2304,共10页中国科学（技术科学英文版）

基　　金：supported by the National Natural Science Foundation of China(Grant Nos.61322408,61221004,61422407,61334007,61474136,61274091,61376112,61306117,61106119,and 61106082);National Basic Research Program of China(Grant No.2011CBA00602);National High Technology Research and Development Program of China(Grant Nos.2014AA032900,2013AA030801,2011AA010401 and 2011AA-010402)

摘　　要：In this paper, different electrical measurement and operation methods of resistive random access memory （RRAM） have been summarized, including voltage sweeping mode （VSM）, current sweeping mode （CSM）, co lstant current stress （CCS）, constant voltage stress （CVS）, rectangular pulse mode （RPM）, and triangle pulse mode （TPM）. Meanwhile, the effects of these meas- urement methods on the forming, set, reset and read operation as well as endurance performance have been compared. Finally, their respective controllability of various resistive switching parameters have been summar zeal and analyzed.

关 键 词：resistive random access memory operation method voltage sweeping mode current sweeping mode constant currentstress constant voltage stress rectangular pulse mode triangle pulse mode 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]