阵列型高功率薄膜匹配负载研究  

Study on the array type high power thin film resistance termination

作　　者：蒋中东[1] 张万里[1] 彭斌[1] 邓森洋[1] 蒋洪川[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054

出　　处：《电子元件与材料》2014年第12期25-28,共4页Electronic Components And Materials

基　　金：教育部支撑资助项目(No.625010305)

摘　　要：基于功率分配思想和简化实频法设计了频率为DC^20 GHz,承载功率为40 W的阵列型微波薄膜匹配负载器件;采用丝网印刷工艺和射频磁控溅射工艺制备了设计的Ta N薄膜匹配负载器件。研究了所制器件的性能,结果表明,在DC^23.6 GHz,电压驻波比均小于1.3。加载功率为8,18,40 W时,薄膜表面的最高温度分别为37.6,59.5,113.6℃。热成像测试结果表明,所设计器件的两个电阻膜温度基本一致,实现了功率的平均分配。A thin film resistance termination with array structure were designed based on power divider and simplified real frequency method. The array resistance termination operates at DC-20 GHz with 40 W applied power. The designed Ta N thin film resistance termination was fabricated by screen printing method and RF magnetron sputtering. The properties of prepared termination were studied. The results show the VSWR of the termination is less than 1.3 within the frequency range of DC-23.6 GHz. When the resistance termination is loaded with power of 8, 18 and 40 W, the maximum surface temperature of the thin film resistance termination is about 37.6, 59.5 and 113.6 ℃, respectively. Thermal imaging results show that the two resistive films of the resistance termination exhibit the same temperature distribution, which suggests that the input microwave power is divided averagely by the two resistive film resistances.

关 键 词：微波匹配负载 TaN薄膜 阵列型 高功率 简化实频法 丝网印刷 射频磁控溅射 

分 类 号：TB34[一般工业技术—材料科学与工程]