嵌入式存储器空间单粒子效应失效率评估方法研究  

Study on the Prediction of Single-event Effects Induced Failure Rate for Embedded Memories

作　　者：支天[1,2] 杨海钢[1] 蔡刚[1] 秋小强[1] 李天文[1,2] 王新刚[1,2] 

机构地区：[1]中国科学院电子学研究所,北京100190 [2]中国科学院大学,北京100190

出　　处：《电子与信息学报》2014年第12期3035-3041,共7页Journal of Electronics & Information Technology

基　　金：中国科学院;国家外国专家局创新团队国际合作伙伴计划资助;国家科技重大专项(2013ZX03006004)资助课题

摘　　要：嵌入式存储器易受到空间单粒子效应(Single-Event Effects,SEE)的影响。该文提出了一种单粒子效应失效率评估的方法,包含了单粒子翻转和单粒子瞬态扰动等效应对嵌入式存储器不同电路单元的具体影响,可对不同存储形式、不同容错方法的嵌入式存储器单粒子效应失效率进行定量评估。该文提出的评估方法在中国科学院电子学研究所自主研制的嵌入式可编程存储器试验芯片上得到了验证,地面单粒子模拟实验表明该文方法预测的失效率评估结果与实验测试结果的平均偏差约为10.5%。Embedded memories are easily influenced by Single-Event Effects （SEE）. A model to calculate the SEE failure rate of an embedded memory is proposed, which considers the likelihood that an single-event upset or single-event transient will become an error in different types of circuits. It can also be used for the quantitative analysis of SEE mitigation techniques for versatile memories. Experimental investigations are performed using heavy ion accelerators on an experimental embedded programmable memory, which is designed by Institute of Electronics, Chinese Academy of Sciences. The result of 10.5% average error verifies the effectiveness of the proposed model.

关 键 词：片上系统 嵌入式存储器 单粒子效应(SEE) 失效率 评估 

分 类 号：TN432[电子电信—微电子学与固体电子学]