气相刻蚀选择性制备单一导电属性单壁碳纳米管  

Synthesis of semiconducting or metallic single-walled carbon nanotubes by gas-phase selective etching

作　　者：侯鹏翔[1] 刘畅[1] 成会明[1] 

机构地区：[1]中国科学院金属研究所,沈阳材料科学国家(联合)实验室,沈阳110016

出　　处：《科学通报》2014年第33期3280-3292,共13页Chinese Science Bulletin

基　　金：国家自然科学基金(51102242;51172241;51221264;51272257);国家重点基础研究发展计划(2011CB932601)资助

摘　　要：单一导电属性单壁碳纳米管的控制制备是目前碳纳米管研究领域的重点和难点,也是制约其在微纳电子器件中应用的瓶颈.近年来,研究者致力于发展获得单一导电属性单壁碳纳米管的方法,并取得了较大进展.其中,气相选择性刻蚀方法因具有工艺简单、效果显著、易规模化等特点而备受关注.本文简要介绍了气相选择性刻蚀方法制备单一导电属性碳纳米管的原理及特点,并综述近年来原位生长-刻蚀制备研究所取得的主要进展,最后展望其发展趋势.Single-walled carbon nanotubes （SWCNTs） can be either semiconducting or metallic, depending on their chirality. As-synthesized SWCNT samples are usually mixtures of semiconducting and metallic species, and separation of the two is important for their use in electronic devices. In recent years, notable progress in the synthesis of semiconducting or metallic SWCNTs has been made. Among the methods reported, selective removal of one type of SWCNTs by gas-phase etching shows the advantages of simplicity, scalability, and high efficiency. This paper introduces the principles of the gas-phase etching method. In particular, recent progress in synthesizing SWCNTs of uniform electronic type by this strategy is reviewed. Finally, the main challenges and development trends in gas-phase etching of SWCNTs are considered.

关 键 词：单壁碳纳米管 金属性 半导体性 气相刻蚀 

分 类 号：TB383.1[一般工业技术—材料科学与工程]