助溶剂NH_4I条件下CuI晶体的降温法生长及性能研究  

Growth and Characterization of CuI Crystal by Temperature Reduction Method Using NH_4I as Co-solvent

作　　者：吕洋洋[1,2] 许智煌[1] 叶李旺[1] 苏根博[1] 庄欣欣[1] 

机构地区：[1]中国科学院光电材料化学与物理重点实验室,福州350002 [2]中国科学院大学,北京100049

出　　处：《人工晶体学报》2014年第10期2481-2486,共6页Journal of Synthetic Crystals

基　　金：中国科学院光电材料化学与物理重点实验室资助项目

摘　　要：以碘化铵（NH4I）作为助溶剂,采用溶液降温法生长CuI晶体。在50-60℃温区、6 mol/L助溶剂浓度条件下生长出厘米级尺寸的透明块状晶体。采用XRD、综合热分析（TG/DTA）对晶体进行结构表征,晶体属于γ相,相变温度分别为370℃（γ相→β相）和409℃（β相→α相）。利用透射光谱、光致发光谱分析晶体的光学性能,晶体在可见区波段透过率达到70%,在426 nm附近有一个明显的带边特征峰,并伴有一个412 nm的肩峰。霍尔测试表明晶体为p型半导体,相应迁移率为11.88 cm^2·V^-1·s^-1。Cuprous iodide（ CuI） crystals were grown by temperature reduction method using NH4 I as cosolvent. Transparent centimeter-scaled bulk crystal were obtained in 6 mol /L solutions at the range of 50-60 ℃. The as-grown crystal were charaterized by X-ray diffraction（ XRD） and thermal analysis（ TG /DTA）. Crystals belong to the γ-phase with cubic structure and its phase change temperatures were 370℃（ γ→β） or 409 ℃（ β→α）. Optical and electronic properties of the crystal were analyzed by optical transmission,photoluminescence and Hall-effect measurements,respectively. The crystal exhibited high transmittance（ over 70%）,good p-type mobility（ 11. 88 cm^2·V^-1·s^-1）,and an intensive band-edge emission at around 426 nm accompanied by a shoulder band at 412 nm.

关 键 词：碘化亚铜 溶液降温法 碘化铵 光致发光 迁移率 

分 类 号：O78[理学—晶体学]