不同pH值下ZTS晶体(100)面台阶生长动力学规律和位错缺陷的研究  

Research of Step Growth Kinetics and Dislocation Defects on the(100) Face of ZTS Crystal under Different pH Values

作　　者：程旻[1] 康道远 宋森[1] 李明伟[1] 张小莉[1] 

机构地区：[1]重庆大学动力工程学院,低品位能源利用技术及系统教育部重点实验室,重庆400030

出　　处：《人工晶体学报》2014年第10期2534-2539,共6页Journal of Synthetic Crystals

基　　金：中央高校基本科研业务费(CDJZR13140015)

摘　　要：通过利用光学显微镜,对不同pH值下ZTS晶体(100)面的台阶推移过程进行了实时观察,发现在同一过饱和度下,调高生长溶液的pH值会导致台阶推移速率降低;而调低pH值时,台阶的平均推移速率增大,当pH=4.2时,(100)面生长速度最快。计算出不同pH值下的台阶动力学系数βl和台阶活化能E的数值。对不同pH值下生长出的ZTS晶体的(100)面进行了位错缺陷观察,发现pH=4.2时,位错密度较低,有利于晶体生长质量的提高。In-situ observation of displacement processes of steps on the（ 100） face of ZTS crystal under different pH values were observed by optical microscopy. The results show that the mean displacement velocity of steps gets slower when the pH value increases. However,the mean displacement velocity of steps increases as the pH value of growth solution get lower,and reaches the maximum under the same supersaturation when pH = 4. 2. Meantime the step kinetics of ZTS crystal on the（ 100） face was studied,and the step kinetics coefficient βland the activation energy of growth unit E under different pH values were calculated. Finally,the observation of dislocation defects on the（ 100） face of ZTS crystals which were grown from different pH values solution indicates that the density of dislocation pits is smaller when pH = 4. 2,the quality of the crystal has been improved.

关 键 词：ZTS晶体 PH值 台阶推移速率 动力学 位错缺陷 

分 类 号：O78[理学—晶体学]