基于Nand Flash的高速存储器结构设计  

Architecture design of high-speed storage system based on Nand Flash

作　　者：苏秀红[1] 李春枝[1] 申川[1] 

机构地区：[1]中国工程物理研究院总体工程研究所,四川绵阳621900

出　　处：《电子设计工程》2014年第23期4-7,共4页Electronic Design Engineering

基　　金：中国工程物理研究院总体工程研究所创新基金(13cxj30)

摘　　要：Nand Flash存储器具有容量较大,改写速度快等优点,适用于大量数据的存储,因而在业界得到了越来越广泛的应用。为了设计大容量、高存储速度、易扩展的存储系统,本文通过分析理论存储速度,结合直接存储器访问(DMA)技术、交替双平面编程和流水线技术,设计了一种高效的高速存储体系结构。本文同时利用并行存储技术来提高存储速度。通过对此存储系统的存储速度进行分析,结果表明理论最高存储速度可以达到319.2 MB/s,在某弹载存储器中能实现200 MB/s的实际数据存储速度。Nand Flash becomes widely used for its large capacity and highly rewrite speed, and it is suitable for storage of large amounts of data. To design high-speed, large capacity and expansive storage system, we analyse academic storage speed and introduce an efficient, high-speed storage system combined with direct memory access （DMA）, pipeline operation technologies and interleave two-plane page program mode. We also apply the parallel bus operation technology to improve storage speed. The analysis of storage speed shows that the highest academic storage speed can reach 319.2 MB/s. It can achieve the storage speed of 200 MB/s in certain missile-borne recorder.

关 键 词：高速存储系统 DMA 流水线技术 交替双平面编程 并行存储技术 

分 类 号：TP277[自动化与计算机技术—检测技术与自动化装置]