机械活化法强化液晶显示器中铟浸出的动力学  

Kinetics in Enhancing Indium Leaching from Liquid Crystal Display by Mechanical Activation

作　　者：翟袁桢 徐金球[1] 

机构地区：[1]上海第二工业大学城市建设与环境工程学院,上海201209

出　　处：《上海第二工业大学学报》2014年第4期278-282,共5页Journal of Shanghai Polytechnic University

基　　金：上海市教育委员会重点项目(No.12zz194);上海市教育委员会重点学科建设项目(No.J51803);上海第二工业大学培育学科建设项目(No.XXKPY1303)资助

摘　　要：以废液晶显示器(Liquid Crystal Display,LCD)面板为原料,介绍了利用机械活化手段强化LCD面板中铟浸出的方法,研究了机械活化法对浸出铟的影响,以及活化后浸出铟的动力学规律。研究结果表明,机械活化法可有效强化LCD中铟的浸出反应。物料经机械活化后,化学活性提高,反应速度加快,表观活化能和表观反应级数均降低。活化30和60 min后的浸铟表观活化能由未活化时的70.2 k J/mol分别降低至53.3和39.7 k J/mol,表观反应级数由原来的1.21分别降低至0.98和0.89。The waste liquid crystal display （LCD） panels was used as raw materials. The method of enhancing the indium leaching by mechanical activation from the LCD was expounded. The effect of mechanical activation on indium leaching was studied and the kinetics of indium leaching after mechanical activation was researched. The results showed that mechanical activation method can effectively strengthen the leaching reaction of indium from the LCD. The chemical activation could be enhanced and the reaction speed could be improved. The apparent activation energy and the series of reaction were decreased, while the chemical activity was enhanced and reaction rate was accelerated after the materials were activated in the mechanical activation equipment. The apparent activation energy after 30 and 60 min activation was reduced to 53.3 and 39.7 kJ/mol from 70.2 kJ/mol in a non-activated state and the series of reaction was reduced from 1.21 to 0.98 and 0.89.

关 键 词：铟 机械活化 浸出 动力学 

分 类 号：X76[环境科学与工程—环境工程] X705