基于功率MOSFET的高速高压脉冲产生器  

Design of High- speed and High- voltage Pulse Generator Based on MOSFET

作　　者：杜继业[1] 宋岩[1] 郭明安[1] 宋顾周[1] 马继明[1] 

机构地区：[1]西北核技术研究所,西安710024

出　　处：《核电子学与探测技术》2014年第7期842-845,共4页Nuclear Electronics & Detection Technology

摘　　要：通过研究功率MOSFET器件的开关特性和脉冲产生技术,设计了互补推挽和集成芯片两种MOSFET栅驱动脉冲电路,其较好的驱动能力,极大的提升了MOSFET的开关速度,分别实现了上升(下降)时间小于5 ns和2.5 ns、输出幅度300~500 V、脉冲宽度5 ns^0.2ms可调的高速、高压的脉冲产生与放大。据此研制成功的脉冲产生器具有稳定性好、带负载能力强、输出脉宽调节范围大、体积小等特点。该脉冲产生器已成功应用于像增强器高速摄影的电子快门装置,并在其他需要高速、高压脉冲领域有一定应用前景。Complementary push-pull circuit and MOSFET DRIVER module circuit are designed according to the analysis of switch characters and pulse-generating technology of MOSFETs.They improved the switch rate of MOSFETs for their good drive ability and high speed and high voltage pulses can be generated and amplified. Less than 5ns and 2.5ns of the rise time （fall time） can be achieved respectively.The amplitude of -300V^-500V and the pulse width of 5ns^1ms can be achieved by both of them.Designed pulse generators based on the driving circuits have high performances of reliability, stability, load capacity and range of pulse width.They have been used in gating image intensifiers for high-speed photography and can be applied in many regions which need pulses with high amplitude, high-speed edge and large width range.

关 键 词：高压脉冲 MOSFET 脉冲产生器 驱动电路 

分 类 号：TN386[电子电信—物理电子学]