基于GaN HEMT的0.8～4 GHz宽带平衡功率放大器  

A 0.8-4GHz Wideband Balanced Power Amplifier Based on GaN HEMTs

作　　者：来晋明[1] 罗嘉[1] 由利人[2] 杨瑜[1] 赵伟星[1] 彭安尽 

机构地区：[1]西南电子设备研究所,成都610036 [2]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2015年第1期44-48,72,共6页Semiconductor Technology

摘　　要：基于Ga N高电子迁移率晶体管（HEMT）技术,研制了在0.8-4 GHz频率下,输出功率大于50 W的宽带平衡式功率放大器。采用3 d B耦合器电桥构建平衡式功率放大器结构;采用多节阻抗匹配技术设计了输入/输出匹配网络,实现了功率放大器的宽带特性;采用高介电常数Al2O3基材实现了小型化功率放大器单元;采用热膨胀系数与Si C接近的铜-钼-铜载板作为Ga N HEMT管芯共晶载体,防止功率管芯高温工作过程中因为热膨胀而烧毁。测试结果表明,在0.8-4 GHz频带内,功率放大器功率增益大于6.4 d B,增益平坦度为±1.5 d B,饱和输出功率值大于58.2 W,漏极效率为41%-62%。Based on the GaN high electron mobility transistor （HEMT） technology, a high performance wideband balanced power amplifier was designed and implemented, which could supply output power of more than 50 W in 0.8-4 GHz. The balanced structure was constructed using 3 dB coupled bridge, and the multi-section impedance matching technique was applied to the design of the input and output matching networks to obtain a good wide-band performance. The power amplifier units were fabricated on high-k Al2O3 substrate. Cu-Mo-Cu was used as the carrier sheet to protect the GaN HEMT from burning-out under high temperature worke because of its similar coefficient of thermal expansion to that of SiC. The measured results indicate that the amplifier supplies at least 58.2 W saturated output power with an associated power gain higher than 6.4 dB from 0.8 GHz to 4 GHz. The gain flatness is ± 1.5 dB, and the drain efficiency is between 41% and 62%.

关 键 词：氮化镓高电子迁移率晶体管(GaN HEMT) 宽带功率放大器 平衡功率放大器 宽带匹配 3dB耦合器 

分 类 号：TN722.75[电子电信—电路与系统]