忆阻器的建模及高精度忆阻值读写电路的设计  

Modeling of the Memristor and High Precision Resistance Read and Write Circuit Design

作　　者：高耀梁 甘朝晖[1] 尹力[1] 

机构地区：[1]武汉科技大学信息科学与工程学院,武汉430081

出　　处：《电子器件》2014年第6期1145-1150,共6页Chinese Journal of Electron Devices

基　　金：湖北省自然科学基金项目(2011CDC075)

摘　　要：使用现有电路元件设计了一种荷控忆阻器的理论模型。由于把忆阻器应用于存储器、神经网络、信号处理等领域均涉及到忆阻器的读写操作,并且目前忆阻器大多是数字量0和1的操作,没有模拟量的操作。所以利用了荷控忆阻器的电荷特性,给出一种描述如何读取忆阻器的模拟忆阻值的方法。利用了荷控忆阻器的频率特性,设计了一个反馈式忆阻值写电路,该电路能够在忆阻器的阻态范围内进行任意模拟量的写操作。仿真结果验证了设计的正确性。Designing a theoretical model for the charge-control memristor with the existing circuit element. The memristor used in the memory,neural network,signal processing and other fields is related to the memristor read and write operations. Now most of the memristor is based on digital operation in 0 and 1,and no analog operation. So according to the charge characteristics of the charge-control memristor,a describing method is given out how to read the analog memristor＇s resistance. And then according to the frequency characteristics of the charge-control memristor a feedback write circuit is designed to write some analog resistance in the memristor resistance range. The simulation results verify the correctness of the design.

关 键 词：忆阻器 建模 读写电路 SPICE 

分 类 号：TN710[电子电信—电路与系统]