电场条件下脉冲激光烧蚀制备纳米硅晶粒成核生长动力学研究  

Dynamics of Growth and Nucleation for Si Nano-crystal Grains Prepared by Pulsed Laser Ablation in Electric Field

作　　者：邓泽超[1] 胡自强[1] 丁学成[1] 褚立志[1] 秦爱丽[1] 傅广生[1] 王英龙[1] 

机构地区：[1]河北大学物理科学与技术学院、河北省光电信息材料重点实验室,河北保定071002

出　　处：《光子学报》2014年第12期17-20,共4页Acta Photonica Sinica

基　　金：国家重点基础研究发展计划前期专项基金(No.2011CB612305);河北省自然科学基金(No.E2012201035、A2015201217);河北省高等学校科学研究项目(No.Q2012084)资助

摘　　要：在室温、10Pa氩气环境氛围中,引入垂直于烧蚀羽辉轴线的外加直流电场,采用脉冲激光烧蚀技术制备了一系列纳米硅晶薄膜,衬底分布于以烧蚀点为圆心的弧形支架上.扫描电子显微镜、喇曼散射谱和X射线衍射谱检测结果表明:晶粒平均尺寸随着电压的增加逐渐变大,且靠近接地极板处的晶粒尺寸比与之对称角度处的略大;薄膜中晶粒面密度随着电压的增加先减小后增大而后再减小.Si nano-crystal films were prepared by pulsed laser ablation in extra direct current electric field that vertical to plume axis in Ar gas of 10 Pa at room temperature. Substrates were fixed on the arc bracket with the ablation spot as the circular center. The morphology and composition of films were characterized by scanning electron microscopy graphs, Raman scattering spectra and x-ray diffraction spectra. It drew that the average size of grains increasing with the addition of voltage, and the size of grains near negative board bigger than those near positive board. The area density of grains decrease at first and then increase and decrease finally, furthermore, the distribution character changed from negative board to positive board.

关 键 词：纳米晶粒 成核生长动力学 脉冲激光烧蚀 外加电场 

分 类 号：O484[理学—固体物理]