退火后应变Ga_(1-x)ln_xN_yAs_(1-y)/GaAs量子阱特性  

Characteristics of Strained Ga_(1-x)ln_xN_yAs_(1-y)/GaAs Quantum Well after Annealing

作　　者：李培[1] 唐吉玉[1] 文于华[1] 王茜[1] 李德钦[1] 

机构地区：[1]华南师范大学物理与电信工程学院,广东广州510006

出　　处：《材料科学与工程学报》2014年第4期505-508,共4页Journal of Materials Science and Engineering

基　　金：国家自然科学基金资助项目(61271127)

摘　　要：引入N原子周围In原子数r自建模型,研究退火对GaInNAs/GaAs量子阱能带结构和应变效应的影响,计算退火前后量子阱的光增益谱,讨论了退火温度和量子阱阱宽对光增益峰值蓝移的影响。结果表明退火使带隙发生蓝移,光增益峰值向短波方向移动,退火温度T越高,相同组分条件下的峰值蓝移越大。减小合金中N含量以及增加量子阱阱宽可减少增益峰值蓝移,从而降低退火带来的不利影响。We investigated the band structure of strained GaInNAs/GaAs quantum wells （QWs） after thermal annealing by introducing In atom number around N atom into band-anti-crossing （BAC） model. The effects of annealing temperature and well width on the blueshift of gain peak are discussed. The results demonstrate that proper composition of the alloy with lower N composition and larger quantum well width can decrease the blueshift caused by thermal annealing.

关 键 词：GaInNAs/GaAs 退火 光增益 

分 类 号：TN248[电子电信—物理电子学]