Cu_(0.4)In(0.4)Zn_(1.2)S_2纳米线的催化生长  

Catalyzed Growth of Cu_(0.4)In(0.4)Zn_(1.2)S_2 Nanowires

作　　者：熊志勇[1] 胡建力[1] 李振松[1] 邹超[1] 

机构地区：[1]温州大学化学与材料工程学院,浙江温州325027

出　　处：《材料科学与工程学报》2014年第5期682-685,700,共5页Journal of Materials Science and Engineering

基　　金：国家自然科学基金资助项目(51102186)

摘　　要：采用液相法制备了Cu0.4In0.4Zn1.2S2固溶半导体纳米线。对纳米线生长过程的分析表明,纳米线生长遵循溶液-固态-固相机理。前驱体首先受热分解形成Cu1.75S纳米晶,利用其结构中存在的Cu+空位溶解In3+和Zn2+,达到饱和后析出晶体形成Cu0.4In0.4Zn1.2S2固溶半导体纳米线。X射线衍射(XRD)、扫描电镜(SEM)、透射电镜(TEM)分析表明,纳米线呈曲折Z形,长度为5μm,具有纤锌矿结构。Cu0.4In0.4Zn1.2S2 semiconductor nanowires were prepared via solution-based method.The investigation of nanowires suggests that the growth follows the solution-solid-solid mechanism.The precursors of Cu（dedc）2were thermal decomposed into Cu1.75 S,which favored the dissolution of In3＋and Zn2＋for its nature of fast ionic conductor and acted as catalysts for the growth of Cu0.4In0.4Zn1.2S2 semiconductor nanowires.The analysis on the results of X-ray diffraction（XRD）,scanning electron microscopy（SEM）and transmission electron microscopy（TEM）indicate that zigzag nanowires are wurtzite phase,with length of5μm.

关 键 词：纳米线 催化 Cu0.4In0.4Zn1.2S2 硫化亚铜 

分 类 号：O649.1[理学—物理化学] TB383[理学—化学]