Tight-binding electron–phonon coupling and band renormalization in graphene  

Tight-binding electron–phonon coupling and band renormalization in graphene

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作  者:张德生 康广震 李俊 

机构地区:[1]National Laboratory of Solid State Microstructures,Nanjing University [2]Department of Physics,Nanjing University

出  处:《Chinese Physics B》2015年第1期434-439,共6页中国物理B(英文版)

基  金:Project supported by the National Natural Science Foundation of China(Grant Nos.10574063,11275097,10935001,11274166,and 11075075);the National Basic Research Program of China(Grant No.2012CB921504);the Research Fund for the Doctoral Program of Higher Education,China(Grant No.2012009111002)

摘  要:The kink structure in the quasiparticle spectrum of electrons in graphene observed at 200 me V below the Fermi level by angle-resolved photoemission spectroscopy(ARPES) was claimed to be caused by a tight-binding electron–phonon(e–ph) coupling in the previous theoretical studies. However, we numerically find that the e–ph coupling effect in this approach is too weak to account for the ARPES data. The former agreement between this approach and the ARPES data is due to an enlargement of the coupling constant by almost four times.The kink structure in the quasiparticle spectrum of electrons in graphene observed at 200 me V below the Fermi level by angle-resolved photoemission spectroscopy(ARPES) was claimed to be caused by a tight-binding electron–phonon(e–ph) coupling in the previous theoretical studies. However, we numerically find that the e–ph coupling effect in this approach is too weak to account for the ARPES data. The former agreement between this approach and the ARPES data is due to an enlargement of the coupling constant by almost four times.

关 键 词:GRAPHENE electron–phonon interaction KINK effective mass-renormalization parameter 

分 类 号:O562[理学—原子与分子物理]

 

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