溶胶-凝胶法制备ZnAl_2O_4∶Tb^(3+)薄膜及其光学性能研究  

Synthesis and Optical Properties of ZnAl_2O_4∶ Tb^(3+) Thin Films by Sol-Gel Method

作　　者：常天赐 杨勤学[1] 雷志高[1] 孔峻涵 孟大维[1] 张扬[1] 李木青 王君霞[1] 

机构地区：[1]中国地质大学材料与化学学院,武汉430074

出　　处：《人工晶体学报》2014年第11期2806-2810,共5页Journal of Synthetic Crystals

基　　金：国家自然科学基金(41172051;21203170);国家大学生创新训练计划(201310491012);中国地质大学大学生自主创新资助计划(1410491B04);李四光创新人才计划和英才工程计划项目

摘　　要：使用溶胶-凝胶法在硅片衬底上制备出不同浓度Tb3+掺杂的Zn Al2O4∶Tb3+薄膜,使用X射线衍射(XRD)、热重-示差扫描量热(TG-DSC)、扫描电镜(SEM)以及荧光光谱分析(PL)进行了表征。结果表明,在700℃煅烧温度下得到的Zn Al2O4∶Tb3+薄膜能够形成良好的锌铝尖晶石物相。700℃煅烧所得样品以薄膜形态附着在硅片衬底上,薄膜表面存在小尺寸裂纹,且与衬底之间附着良好。在232 nm紫外光激发下,样品的发射光谱由位于489 nm、543 nm、587 nm和620 nm的四个发射峰组成,分别对应Tb3+的5D4→7FJ(J=6,5,4,3)的跃迁,并且当Tb3+掺杂浓度为5at%时,样品的发光强度达到最大值,继续增加Tb3+浓度,则会发生浓度猝灭现象,发光强度降低。Tb3 ＋-doped Zn Al2O4 thin films were prepared by sol-gel method on silicon wafers. The properties of Zn Al2O4∶ Tb3 ＋films were characterized by X-ray diffraction（ XRD）,thermogravimetry and differential scanning calorimetry（ TG-DSC）,scanning electron microscopy（ SEM） and photoluminescence spectrum（ PL）. The results show that the films attached on the silicon wafers are flaked with a good adhesion after the films are calcined at 700 ℃. The emission spectrum consists of four characteristic emission of Tb3 ＋at 489 nm（5D4→7F6）,543 nm（5D4→7F5）,587 nm（5D4→7F4）,620 nm（5D4→7F3）,respectively. The Zn Al2O4∶ Tb3 ＋thin films revealed that the strongest emission intensity is at543 nm when the Tb3 ＋concentration reaches 5at%,and that the concentration quenching will occur when Tb3 ＋concentration increases.

关 键 词：ZNAL2O4 TB3+ 溶胶-凝胶 光致发光 

分 类 号：O484[理学—固体物理]