A 31–45.5 GHz injection-locked frequency divider in 90-nm CMOS technology  

作　　者：Fa-en LIU Zhi-gong WANG Zhi-qun LI Qin LI Lu TANG Ge-liang YANG 

机构地区：[1]Institute of RF- & OE-ICs, Southeast University

出　　处：《Journal of Zhejiang University-Science C(Computers and Electronics)》2014年第12期1183-1189,共7页浙江大学学报C辑（计算机与电子（英文版）

基　　金：Project supported by the National Basic Research Program(973)of China(No.2010CB327404);the National High-Tech R&D Program(863)of China(No.2011AA10305);the National Natural Science Foundation of China(Nos.60901012 and 61106024)

摘　　要：We present a 31–45.5 GHz injection-locked frequency divider(ILFD) implemented in a standard 90-nm CMOS process. To reduce parasitic capacitance and increase the operating frequency, an NMOS-only cross-coupled pair is adopted to provide negative resistance. Acting as an adjustable resistor, an NMOS transistor with a tunable gate bias voltage is connected to the differential output terminals for locking range extension. Measurements show that the designed ILFD can be fully functional in a wide locking range and provides a good figure-of-merit. Under a 1 V tunable bias voltage, the self-resonant frequency of the divider is 19.11 GHz and the maximum locking range is 37.7% at 38.5 GHz with an input power of 0 d Bm. The power consumption is 2.88 m W under a supply voltage of 1.2 V. The size of the chip including the pads is 0.62 mm×0.42 mm.We present a 31-45.5 GHz injection-locked frequency divider （ILFD） implemented in a standard 90-nm CMOS process. To reduce parasitic capacitance and increase the operating frequency, an NMOS-only cross-coupled pair is adopted to provide negative resistance. Acting as an adjustable resistor, an NMOS transistor with a tunable gate bias voltage is connected to the differential output terminals for locking range extension. Measurements show that the designed ILFD can be fully functional in a wide locking range and provides a good figure-of-merit. Under a 1V tunable bias voltage, the self-resonant frequency of the divider is 19.11 GHz and the maximum locking range is 37.7% at 38.5 GHz with an input power of 0 dBm. The power con- sumption is 2.88 mW under a supply voltage of 1.2 V. The size of the chip including the pads is 0.62 mm×0.42 mm.

关 键 词：CMOS Injection-locked frequency divider(ILFD) Millimeter wave Wide locking range Monolithic microwave integrated circuit(MMIC) 

分 类 号：TN772[电子电信—电路与系统]