无掩模选择性制备硅纳米线阵列及其光致发光  

Maskless Selective Fabrication and Photoluminescence of Patterned Si Nanowire Arrays

作　　者：张帅[1,2] 吕文辉[2] 史伟民[1] 黄璐[1] 杨伟光[1] 刘进[1] 匡华慧 明秀春 沈心蔚 

机构地区：[1]上海大学材料科学与工程学院,上海200072 [2]湖州师范学院理学院,浙江湖州313000

出　　处：《上海大学学报（自然科学版）》2014年第6期689-693,共5页Journal of Shanghai University:Natural Science Edition

基　　金：国家自然科学基金资助项目(61204068);中国科学院光电材料化学与物理重点实验室基金资助项目(2008DP173016);浙江大学硅材料国家重点实验室开放课题资助项目(SKL2010-5);湖州师范学院科研基金资助项目(2014XJKY48)

摘　　要：基于金属辅助硅化学刻蚀发展了一种无掩模选择性区域制备硅纳米线阵列的方法,并利用该方法成功制备了图形化的硅纳米线阵列.扫描电子显微镜(scanning electron microscope,SEM)分析表明,所制备的硅纳米线阵列是高质量的多孔微纳米结构,并利用拉曼光谱仪研究了室温下硅纳米线阵列的光致发光特性.结果表明,硅纳米线阵列可实现有效的光发射,发光波峰为663 nm.该方法工艺简单、有效,可潜在地应用于构筑硅基光电集成器件.A reasonable selective maskless etching process is developed to fabricate patterned Si nanowire arrays on the basis of metal-assisted silicon chemical etching.The patterned Si nanowire arrays are successfully fabricated in a selective maskless etching process.The surface morphology and photoluminescence of the patterned Si nanowire arrays are characterized by a scanning electron microscope （SEM） and a Raman spectrometer.It is indicated that patterned Si nanowire arrays are high quality porous micro-and nanostructured arrays.The photoluminescence of patterned Si nanowire arrays reveals that a strong light emission peak at 663 nm is obtained.Results show that a simple and efficient process to fabricate patterned Si nanowire arrays for Si-based optoelectronic integrated devices can be obtained.

关 键 词：硅纳米线阵列 无掩模工艺 光致发光 

分 类 号：TN40[电子电信—微电子学与固体电子学]