原位退火对CdZnTe晶体性能的影响  

Effect of In-situ Annealing on Properties of CdZnTe Crystals

作　　者：张涛[1] 闵嘉华[1] 梁小燕[1] 滕家琪[1] 时彬彬[1] 王林军[1] 

机构地区：[1]上海大学材料科学与工程学院,上海200072

出　　处：《上海大学学报（自然科学版）》2014年第6期701-706,共6页Journal of Shanghai University:Natural Science Edition

基　　金：国家自然科学基金资助项目(11275122);上海市科委基金重点资助项目(11530500200);上海市教委科研创新基金资助项目(12ZZ096)

摘　　要：采用改进的垂直布里奇曼生长法生长Cd Zn Te(CZT)单晶,并在晶体生长后期采取长时间的原位恒温退火.采用红外透射显微镜、I-V特性曲线以及多道能谱仪测试经过原位退火后的晶体内部Te夹杂相分布、电阻率大小以及能谱响应.结果表明,原位退火可以大幅降低CZT晶体内部大尺寸Te夹杂相的密度,晶体内绝大部分的Te夹杂都集中在5μm以内.此外,原位退火后的晶体电阻率从4.54×108Ω·cm上升至3.73×1010Ω·cm.原位退火后的CZT晶体对241Am@59.5 ke Vγ射线表现出了良好的能量分辨率,为7.29%.CdZnTe （CZT） single crystals were grown by a modified vertical Bridgman method.After the growth was completed,the crystals were annealed at a constant temperature for a long time.Infrared microscope,I-V characteristic curves,and multi-channel spectrometer were employed to analyze Te inclusions distribution in the crystal,electrical resistivity and spectroscopy response of CZT wafers.The results show that in-situ annealing can greatly decrease concentration of Te inclusions,and most of the Te inclusion sizes are less than 5 μm.In addition,electrical resistivity of CZT is increased from 4.54× l0^8 Ω·cm to 3.73× 10^10 Ω·cm after annealing.The ^241Am@59.5 keV γ-ray pulse height spectra of CZT crystal after in-situ annealing reaches 7.29%.

关 键 词：Te夹杂相 退火 CDZNTE 布里奇曼法 探测器 

分 类 号：TB34[一般工业技术—材料科学与工程]