涡腔倒角结构对涡流二极管性能影响的数值模拟  

Numerical simulation of the performance of vortex diodes with chamfered vortex chambers

作　　者：曹寅[1,2] 吴燕华[1] 林超[1,2] 何兆忠[1] 陈堃[1] 

机构地区：[1]中国科学院上海应用物理研究所嘉定园区,上海201800 [2]中国科学院大学,北京100049

出　　处：《核技术》2015年第1期80-84,共5页Nuclear Techniques

基　　金：中国科学院战略性先导科技专项(No.XDA02050100);上海市科研计划项目(No.14ZR1448400)资助

摘　　要：为了探讨涡流二极管涡腔倒角对其流动性能的影响规律,利用计算流体力学方法(Computational Fluid Dynamics,CFD)对4种具有不同高度涡腔倒角的涡流二极管进行了正反向流动的数值模拟,正向流动采用标准k-ε湍流模型,反向流动采用RNG(Renormalization Group)k-ε湍流模型。结果表明,相较于标准结构,其余三种高度的涡腔倒角在较高雷诺数下都可以降低正向流动阻力,但同时也会降低反向流动阻力。其中,高度为3/4涡腔高度的倒角结构,可以最大程度地降低正向流动阻力,同时对反向流动阻力的影响最小,对涡流二极管性能的提高效果最为显著。数值模拟所得结论可为涡流二极管的优化设计提供参考依据。Background： Vortex diode is a kind of uniflow component, and a simple vortex diode contains a vortex chamber, a tangential nozzle and an axial nozzle. Purpose： The aim is to investigate the effect of chamfered vortex chamber structure on vortex diode performance. Methods： Computational Fluid Dynamics （CFD） simulations were used on vortex diodes with four different chamfered structures. Standard k-ε model was selected for forward flow, while RNG （Renormalization Group） k-ε model was selected for reverse flow. Results： The results show that compared with standard structure, all the other three chamfered structures can reduce the positive flow resistances at relatively high Reynolds number, while the reverse flow resistances are also reduced. Among them, the chamfered structure of 3/4 vortex chamber height, can reduce the forward flow resistance to the greatest extent while keeping minimum impact on the reverse flow resistance. Conclusion： The chamfered structure of 3/4 vortex chamber height improves the overall performance of a vortex diode most significantly. The results of the simulation can provide some basis for optimizing the vortex diode performance.

关 键 词：涡流二极管 涡腔 倒角 阻力系数 

分 类 号：TL364[核科学技术—核技术及应用]