Effect of phosphorus ion implantation on back gate effect of partially depleted SOI NMOS under total dose radiation  

作　　者：李蕾蕾 周昕杰 于宗光 封晴 

机构地区：[1]School of Microelectronics, Xidian University [2]The 58th Research Institute of China Electronics Technology Group Corporation

出　　处：《Journal of Semiconductors》2015年第1期82-85,共4页半导体学报（英文版）

基　　金：Project supported by the Major Fund for the National Science and Technology Program,China(No.2009ZX02306-04);the Fund of SOI Research and Development Center(No.20106250XXX)

摘　　要：The mechanism of improving the TID radiation hardened ability of partially depleted silicon-oninsulator（SOI） devices by using the back-gate phosphorus ion implantation technology is studied. The electron traps introduced in Si O2 near back Si O2/Si interface by phosphorus ions implantation can offset positive trapped charges near the back-gate interface. The implanted high concentration phosphorus ions can greatly reduce the back-gate effect of a partially depleted SOI NMOS device, and anti-total-dose radiation ability can reach the level of 1 Mrad（Si） for experimental devices.The mechanism of improving the TID radiation hardened ability of partially depleted silicon-oninsulator（SOI） devices by using the back-gate phosphorus ion implantation technology is studied. The electron traps introduced in Si O2 near back Si O2/Si interface by phosphorus ions implantation can offset positive trapped charges near the back-gate interface. The implanted high concentration phosphorus ions can greatly reduce the back-gate effect of a partially depleted SOI NMOS device, and anti-total-dose radiation ability can reach the level of 1 Mrad（Si） for experimental devices.

关 键 词：back gate phosphorus ions implantation total-dose radiation SOI MOS back-gate effect 

分 类 号：TN386[电子电信—物理电子学]