Voltage reduction of 808 nm GaAsP/(Al)GaInP laser diodes with GaInAsP intermediate layer  

作　　者：朱振 张新 李沛旭 王钢 徐现刚 

机构地区：[1]School of Physics and Engineering,Sun Yat-Sen University [2]Shandong Huaguang Optoelectronics Co.,Ltd [3]State Key Laboratory of Crystal Material,Shandong University

出　　处：《Journal of Semiconductors》2015年第1期105-107,共3页半导体学报（英文版）

基　　金：Project supported by the National Key Basic Research Program of China(No.2013CB632801)

摘　　要：Ga In As P layers and Ga As P/（Al） Ga In P laser diodes（LDs） have been grown on Ga As substrates by metalorganic chemical vapor deposition. The Ga In As P layer, which is lattice matched to Ga As, has an intermediate band gap between Ga0.5In0.5P and Ga As. The Ga In P/Ga As heterojunction spikes, especially in the valence band,can be suppressed by introducing this thin Ga In As P layer into the heterostructure interface. The 808 nm Ga As P/（Al）Ga In P LDs with Ga In As P intermediate layer show a reduced operating voltage compared to the conventional LDs with abrupt Ga In P/Ga As interface due to the enhanced hole injection. As a result, the power conversion efficiency is improved from 52% to 60% at 350 m W output power. At high current injection, the LD with Ga In As P intermediate layer has higher light power owing to the decreased joule heating.Ga In As P layers and Ga As P/（Al） Ga In P laser diodes（LDs） have been grown on Ga As substrates by metalorganic chemical vapor deposition. The Ga In As P layer, which is lattice matched to Ga As, has an intermediate band gap between Ga0.5In0.5P and Ga As. The Ga In P/Ga As heterojunction spikes, especially in the valence band,can be suppressed by introducing this thin Ga In As P layer into the heterostructure interface. The 808 nm Ga As P/（Al）Ga In P LDs with Ga In As P intermediate layer show a reduced operating voltage compared to the conventional LDs with abrupt Ga In P/Ga As interface due to the enhanced hole injection. As a result, the power conversion efficiency is improved from 52% to 60% at 350 m W output power. At high current injection, the LD with Ga In As P intermediate layer has higher light power owing to the decreased joule heating.

关 键 词：MOCVD GaInAsP layer heterojunction voltage reduction 

分 类 号：TN31[电子电信—物理电子学]