A novel lateral cavity surface emitting laser with top sub-wavelength grating  

作　　者：齐爱谊 王宇飞 郭小杰 郑婉华 

机构地区：[1]State key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences [2]Laboratory of Solid-State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences

出　　处：《Journal of Semiconductors》2015年第1期108-112,共5页半导体学报（英文版）

基　　金：Project supported by the Chinese National Key Basic Research Special Fund/CNKBRSF(Nos.2012CB933501,2011CB922002);the National Natural Science Foundation of China(Nos.61025025,61137003,61234004,61021003);the National High Technology Research and Development Program of China(No.2012AA012202)

摘　　要：We report a novel lateral cavity surface emitting laser based on sub-wavelength high-index-contrast grating with in-plane resonance and surface-normal emission. The device is fabricated on a simple commercial wafer without the distributed Bragg reflector and it needs no wafer bonding. It exhibits a side mode suppression ratio of 23.0 d B and a high output power of 5.32 m W at 1552.44 nm. The specific single mode lasing agrees well with the band edge mode calculation of the grating. In 3D simulation, we observe obvious light output from the grating.We report a novel lateral cavity surface emitting laser based on sub-wavelength high-index-contrast grating with in-plane resonance and surface-normal emission. The device is fabricated on a simple commercial wafer without the distributed Bragg reflector and it needs no wafer bonding. It exhibits a side mode suppression ratio of 23.0 d B and a high output power of 5.32 m W at 1552.44 nm. The specific single mode lasing agrees well with the band edge mode calculation of the grating. In 3D simulation, we observe obvious light output from the grating.

关 键 词：photonic crystal surface emitting laser grating 

分 类 号：TN248[电子电信—物理电子学]