A novel SOI pressure sensor for high temperature application  

作　　者：李赛男 梁庭 王伟 洪应平 郑庭丽 熊继军 

机构地区：[1]Key Laboratory of Instrumentation Science & Dynamic Measurement (North University of China),Ministry of Education [2]Ministry of Education and Science Technology on Electronic Test & Measurement Laboratory. Department of Electronic Science and technology, North University of China

出　　处：《Journal of Semiconductors》2015年第1期120-124,共5页半导体学报（英文版）

基　　金：Project supported by the Key Program of the National Natural Science Foundation of China(No.61335008)

摘　　要：The silicon on insulator（SOI） high temperature pressure sensor is a novel pressure sensor with highperformance and high-quality. A structure of a SOI high-temperature pressure sensor is presented in this paper.The key factors including doping concentration and power are analyzed. The process of the sensor is designed with the critical process parameters set appropriately. The test result at room temperature and high temperature shows that nonlinear error below is 0.1%, and hysteresis is less than 0.5%. High temperature measuring results show that the sensor can be used for from room temperature to 350℃ in harsh environments. It offers a reference for the development of high temperature piezoresistive pressure sensors.The silicon on insulator（SOI） high temperature pressure sensor is a novel pressure sensor with highperformance and high-quality. A structure of a SOI high-temperature pressure sensor is presented in this paper.The key factors including doping concentration and power are analyzed. The process of the sensor is designed with the critical process parameters set appropriately. The test result at room temperature and high temperature shows that nonlinear error below is 0.1%, and hysteresis is less than 0.5%. High temperature measuring results show that the sensor can be used for from room temperature to 350℃ in harsh environments. It offers a reference for the development of high temperature piezoresistive pressure sensors.

关 键 词：SOI high temperature pressure sensor doping concentration power 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置] TN386.1[自动化与计算机技术—控制科学与工程]