Effect of H_2O_2 and nonionic surfactant in alkaline copper slurry  

作　　者：袁浩博 刘玉岭 蒋勐婷 陈国栋 刘伟娟 王胜利 

机构地区：[1]Institute of Microelectronics, Hebei University of Technology

出　　处：《Journal of Semiconductors》2015年第1期163-167,共5页半导体学报（英文版）

基　　金：Project supported by the Special Project Items No.2 in National Long-Term Technology Development Plan,China(No.2009ZX02308);the Hebei Natural Science Foundation of China(No.E2013202247);the Natural Science Foundation of Hebei Province,China(No.E2014202147)

摘　　要：For improving the polishing performance, in this article, the roles of a nonionic surfactant（Fatty alcohol polyoxyethylene ether） and H2O2 were investigated in the chemical mechanical planarization process, respectively.Firstly, the effects of the nonionic surfactant on the within-wafer non-uniformity（WIWNU） and the surface roughness were mainly analyzed. In addition, the passivation ability of the slurry, which had no addition of BTA, was also discussed from the viewpoint of the static etch rate, electrochemical curve and residual step height under different concentrations of H2O2. The experimental results distinctly revealed that the nonionic surfactant introduced in the slurry improved the WIWNU and surface roughness, and that a 2 vol% was considered as an appropriate concentration relatively. When the concentration of H2O2 surpasses 3 vol%, the slurry will possess a relatively preferable passivation ability, which can effectively decrease the step height and contribute to acquiring a flat and smooth surface. Hence, based on the result of these experiments, the influences of the nonionic surfactant and H2O2 are further understood, which means the properties of slurry can be improved.For improving the polishing performance, in this article, the roles of a nonionic surfactant（Fatty alcohol polyoxyethylene ether） and H2O2 were investigated in the chemical mechanical planarization process, respectively.Firstly, the effects of the nonionic surfactant on the within-wafer non-uniformity（WIWNU） and the surface roughness were mainly analyzed. In addition, the passivation ability of the slurry, which had no addition of BTA, was also discussed from the viewpoint of the static etch rate, electrochemical curve and residual step height under different concentrations of H2O2. The experimental results distinctly revealed that the nonionic surfactant introduced in the slurry improved the WIWNU and surface roughness, and that a 2 vol% was considered as an appropriate concentration relatively. When the concentration of H2O2 surpasses 3 vol%, the slurry will possess a relatively preferable passivation ability, which can effectively decrease the step height and contribute to acquiring a flat and smooth surface. Hence, based on the result of these experiments, the influences of the nonionic surfactant and H2O2 are further understood, which means the properties of slurry can be improved.

关 键 词：copper CMP nonionic surfactant within wafer non-uniformity surface roughness electrochemical curve step height 

分 类 号：TN305.2[电子电信—物理电子学]