Design and implementation of a high-efficiency concurrent dual-band power amplifier  

作　　者：YANG Qian-kun LIU Yuan-an YU Cui-ping LI Shu-lan LI Jiu-chao 

机构地区：[1]Beijing Key Laboratory of Work Safety Intelligent Monitoring, Beijing University of Posts and Telecommunications [2]School of Electronic Engineering, Beijing University of Posts and Telecommunications

出　　处：《The Journal of China Universities of Posts and Telecommunications》2014年第6期94-99,共6页中国邮电高校学报（英文版）

基　　金：supported by the National Natural Science Foundation of China (61201025);the National Natural Science Foundation of China for the Major Equipment Development (61327806);the National Basic Research Program of China (2014CB339900)

摘　　要：This paper studies the behaviors of power amplifier（PA） driven by a single-carrier continuous wave（CW） signal and a two-carrier CW signal both in theory and simulation, and explains why the traditional dual-band PA failed to perform satisfactory results when a two-carrier CW signal is applied to, called concurrently. Besides that, an evaluation standard of concurrent dual-band PA was presented to value its performance. Solution was given with design and fabrication of a concurrent 1.85 GHz/2.65 GHz class F PA, employing a 10 W GaN HEMT device from Cree, CGH40010, whose measurement shows the saturated output power is 40.6 d Bm and 40.8dB m with drain efficiencies（DE） of 77.4% and 75.3% at 1.85 GHz and 2.65 GHz, respectively. On the other hand, we see that the peak DE achieves 59.7% with an output power of 39.9 dB m in concurrent mode, which follows up with the standard.This paper studies the behaviors of power amplifier（PA） driven by a single-carrier continuous wave（CW） signal and a two-carrier CW signal both in theory and simulation, and explains why the traditional dual-band PA failed to perform satisfactory results when a two-carrier CW signal is applied to, called concurrently. Besides that, an evaluation standard of concurrent dual-band PA was presented to value its performance. Solution was given with design and fabrication of a concurrent 1.85 GHz/2.65 GHz class F PA, employing a 10 W GaN HEMT device from Cree, CGH40010, whose measurement shows the saturated output power is 40.6 d Bm and 40.8dB m with drain efficiencies（DE） of 77.4% and 75.3% at 1.85 GHz and 2.65 GHz, respectively. On the other hand, we see that the peak DE achieves 59.7% with an output power of 39.9 dB m in concurrent mode, which follows up with the standard.

关 键 词：PA concurrent dual-band intermodulation and harmonic high efficiency 

分 类 号：TN722.75[电子电信—电路与系统] TP301.6[自动化与计算机技术—计算机系统结构]