SONOS存储器中隧穿氧化层淀积预清洗工艺研究  

Study on the Pre-Cleaning Process of Tunnel Oxide Deposition of SONOS Memory

作　　者：张顺斌[1] 张可钢 石艳玲[1] 陈华伦 

机构地区：[1]华东师范大学,上海200062 [2]上海华虹宏力半导体制造有限公司,上海201203

出　　处：《微电子学》2014年第6期822-824,832,共4页Microelectronics

基　　金：国家自然科学基金青年基金资助项目(61204038)

摘　　要：介绍了当今业界流行的两种隧穿氧化层淀积预清洗工艺:改进的RCA预清洗工艺以及HF-last预清洗工艺。通过实验对比各自优缺点,分析差异产生的根本原因。相对于改进的RCA预清洗工艺,HF-last预清洗工艺使SONOS存储器阈值电压窗口增大约600mV。但可靠性测试结果表明,HF-last工艺会降低器件的耐烘烤和耐擦写循环能力。进一步的电荷泵对比实验结果表明,HF-last工艺引起的耐烘烤和耐擦写循环能力的降低,分别由Si-SiO2界面态增加和隧穿氧化层变薄引起。Two kinds of current popular process of tunnel oxide pre-cleaning were introduced, which were improved RCA pre-cleaning process and HF last pre-cleaning process. By comparing their advantages and disadvantages, the fundamental reasons of the differences were analyzed. Compared with the improved RCA pre- cleaning process, the HF-last pre-eleaning process could increase the threshold voltage window of a SONOS memory about 600 mV. But the reliability test showed that, the HF-last technology would reduce the device＇s performance in baking and endurance test. The charge pump experiment showed that, in the HF-last process, performance loss in baking test was caused by inducing Si SiO2 interface states, while performance loss in endurance test was caused by tunnel oxide thinning.

关 键 词：SONOS RCA HF-last 可靠性 界面态 

分 类 号：TN405[电子电信—微电子学与固体电子学]