Polishing silicon modification layer on silicon carbide surface by ion beam figuring  

作　　者：邓伟杰 

机构地区：[1]Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China

出　　处：《Chinese Optics Letters》2014年第A02期128-131,共4页中国光学快报（英文版）

摘　　要：Silicon （Si） modification layer on silicon carbide （SIC） surface is widely used in space optical systems. To achieve high-quality optical surface, the technology of ion beam figuring （IBF） is studied. The radio frequency ion beam source is introduced briefly. Then the removal function experiment is studied. The volume removal stability of the IBF reached 97% in 10 h continuous working testing. The parameters of the IBF removal func- tion are calculated by Gaussian fitting including the removal rate and the full-width half-maximum. Then the removal function results are used in practical fabrication. The workpiece is a plane with Si modification layer on SiC surface. After 148 min processing IBF, the final surface error reaches 1.2 nm RMS.Silicon （Si） modification layer on silicon carbide （SIC） surface is widely used in space optical systems. To achieve high-quality optical surface, the technology of ion beam figuring （IBF） is studied. The radio frequency ion beam source is introduced briefly. Then the removal function experiment is studied. The volume removal stability of the IBF reached 97% in 10 h continuous working testing. The parameters of the IBF removal func- tion are calculated by Gaussian fitting including the removal rate and the full-width half-maximum. Then the removal function results are used in practical fabrication. The workpiece is a plane with Si modification layer on SiC surface. After 148 min processing IBF, the final surface error reaches 1.2 nm RMS.

分 类 号：TG175[金属学及工艺—金属表面处理] TQ174.758[金属学及工艺—金属学]