硅基二氧化钒相变薄膜电学特性研究  

Researches on the electrical properties of vanadium oxide thin films on Si substrates

作　　者：熊瑛[1] 文岐业[1] 田伟[1] 毛淇 陈智[2] 杨青慧[1] 荆玉兰[1] 

机构地区：[1]电子科技大学,电子薄膜与集成器件国家重点实验室,成都610054 [2]电子科技大学,通信抗干扰技术国家级重点实验室,成都610054

出　　处：《物理学报》2015年第1期277-281,共5页Acta Physica Sinica

基　　金：国家自然科学基金重点项目(批准号:61131005);教育部科学技术研究重大项目(批准号:313013);国家高技术研究发展计划(批准号:2011AA010204);教育部新世纪优秀人才资助计划(批准号:NCET-11-0068);四川省杰出青年学术技术带头人计划(批准号:2011JQ0001);高校博士点专项科研基金(批准号:20110185130002)资助的课题~~

摘　　要：本文以原子层沉积超薄氧化铝(Al2O3)为过渡层,采用射频反应磁控溅射法在硅半导体基片上制备了颗粒致密并具有(011)择优取向的二氧化钒(VO2)薄膜.该薄膜具有显著的绝缘体—金属相变特性,相变电阻变化超过3个数量级,热滞回线宽度约为6°C.基于VO2薄膜构建了平面二端器件并测试了不同温度下I-V曲线,观测到超过2个数量级的电流跃迁幅度,显示了优越的电致相变特性.室温下电致相变阈值电压为8.6V,电致相变弛豫电压宽度约0.1 V.随着温度升高到60°C,其电致相变所需要的阈值电压减小到2.7 V.本实验制备的VO2薄膜在光电存储、开关、太赫兹调控器件中具有广泛的应用价值.Quality enhanced VO2 thin films have been sputtering deposited on silicon substrates by introducing an ultrathin Al2 O3 buffer between the substrate and the film. With a preferred orientation （011）, the VO2 films have an excellent thermal-induced metal-insulator transition （MIT）. The electrically-driven MIT （E-MIT） characteristics have also been investigated by applying voltage to VO2 thin film based two-terminal device at particular temperatures. Sharp jumps in electric current are observed in the I-V curve with a variation of amplitude by two orders. The threshold voltage decreases with increasing temperature. At room tempature, the threshold voltage is 8.6V and the phase transition ccurs in a voltage width of only 0.1V. With the sharp and fast phase change, the VO2 thin films can be used in ultrafast switching electronic devices.

关 键 词：二氧化钒 电致相变 硅基片 氧化铝 

分 类 号：O484.4[理学—固体物理]