背电极ZnO:Al薄膜与n-a-Si:H膜接触特性的研究  

Study on the contact characteristics of ZnO:Al films with n-a-Si:H films

作　　者：吴芳[1] 王伟[2] 

机构地区：[1]河南教育学院物理与电子工程学院,河南郑州450053 [2]中州大学信息工程学院,河南郑州450044

出　　处：《真空》2015年第1期31-33,共3页Vacuum

基　　金：河南省重点科技攻关项目(142102210043);河南省基础与前沿研究项目(132300410415);河南省教育厅科学技术研究重点项目(14A140017)

摘　　要：本文分别采用电子束蒸发和磁控溅射的方法在n型掺杂(n-Si:H)膜上沉积了不同掺杂量和不同厚度的掺Al的Zn O(Zn O:Al)薄膜。通过I-V测试仪测试了两种方法制备的Zn O:Al薄膜与n-Si:H膜的接触特性,结果显示对于电子束蒸发制备的Zn O:Al薄膜,当掺杂浓度为2.5%时n-a-Si:H/Zn O:Al的接触电阻最小,在厚度变化不大的情况下,n-a-Si:H/Zn O:Al的接触电阻随着Zn O:Al厚度的增加而增大。而磁控溅射制备的Zn O:Al薄膜,n-a-Si:H/Zn O:Al的接触电阻随着厚度的增加而不断减小。ZnO：Al films were prepared on n-a-Si： H films by electron beam evaporation and magnetron sputtering, then the contact characteristic of n-a-Si：H/ZnO：Al were analyzed by I-V testing instrument. It was shown that for the ZnO：Al films prepared by electron beam evaporation, when the doping content is 2.5%, the contact resistance of n-a-Si：H/ZnO：Al is the smallest. When the thickness of ZnO：Al change a little, the contact resistance of n-a-Si：H/ZnO：Al is increasing with the increase of the thickness of ZnO：Al. As to ZnO：Al films prepared by magnetron sputtering, the contact resistance of n-a-Si：H/ZnO：Al is decreasing as the thickness of ZnO：Al is increasing.

关 键 词：Zn O:Al膜 n-Si:H膜 I-V特性 电接触特性 

分 类 号：TB611[一般工业技术—制冷工程]