(K,Na)NbO_3基无铅压电薄膜的制备与表征（英文）  

FABRICATION AND CHARACTERIZATION OF(K,Na)NbO_3-BASED LEAD FREE PIEZOELECTRIC THIN FILM

作　　者：李元行 陈峰[2] 高关胤[1] 徐浩然[1] 吴文彬[1] 

机构地区：[1]合肥微尺度物质科学国家实验室,中国科学技术大学,合肥230026 [2]强磁场实验室,中国科学院,合肥230031

出　　处：《低温物理学报》2015年第1期14-18,共5页Low Temperature Physical Letters

基　　金：Project supported by the NSF of China(Grant Nos.11074237,11274287,11204313);the National Basic Research Program of China(Grant Nos.2009CB929502,2012CB927402)~~

摘　　要：我们采用脉冲激光沉积法,在SrTiO3(001)衬底上以La0.7Sr0.3MnO3作为底电极,制备得单相的0.95(Na0.49K0.49Li0.02)(Nb0.8Ta0.2)-0.05CaZrO3外延薄膜.采用X射线衍射、X射线光电子能谱,电滞回线和介电常数测试分别表征了LKNNT-CZ薄膜的微观结构、表面元素价态和铁电/介电性能.结果表明:(1)制备得到的LKNNT-CZ薄膜的元素组成与靶材相同;(2)在4伏到10伏内均可以获得线型良好且饱和的电滞回线,当驱动电压为10V时,薄膜的剩余极化达到12.4μC/cm2,矫顽电场为102.3kV/cm;(3)薄膜在1kHz频率下的介电常数高达1185.Single phase and epitaxial 0. 95（Na0.49K0.49Li0.02）（Nb0.8Ta0.2）-0. 05CaZrO3 （LKNNT-CZ） piezoelectric thin films are successfully fabricated on La0. 7 Sr0. 3 MnO3 coated SrTiO3 （001） substrates by pulsed laser deposition. The microstructures, surfaces, ferroelectrie and dielectric properties are intensively investigated with high-resolution X-ray diffraction （XRD）, X-ray photoelectron spectra （XPS）, P-E loops and dielectric constant measurements. It is found the epitaxial LKNNT-CZ films show well saturated ferroelectrie hysteresises with the drive voltage ranging from 4 V to 10 V. The film contains a typical dielectric constant of 1185 at 1 kHz, a remnant polarization （P,） of 12. 4 μC/cm^2 and a coercive field （Ec） of 102. 3 kV/em under 10 V.

关 键 词：无铅压电 铌酸钾钠 外延薄膜 介电性质 

分 类 号：O484.1[理学—固体物理]