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作 者:肖文波[1] 刘萌萌[1] 胡方雨[1] 吴华明[1]
机构地区:[1]南昌航空大学无损检测技术教育部重点实验室,南昌330063
出 处:《科学通报》2014年第36期3615-3620,共6页Chinese Science Bulletin
基 金:国家自然科学基金(11264031);江西省青年科学基金(20143ACB21011);江西省发明专利产业化技术示范基金(20143BBM26116);江西省自然科学基金(20132BAB202003);集成光电子学国家重点联合实验室开放课题(IOSKL2012KF14)资助
摘 要:基于Lambert W函数和多项式拟合,提出了一种太阳电池参数提取方法.该方法首先利用Lambert W函数将电池电流输出超越方程显化后积分,得显化积分方程;其次,基于质点平抛运动轨迹与电池伏安特性曲线相似性,对曲线分3段进行拟合后积分,得分段积分方程;最后,根据测量值建立显化积分方程与分段积分方程相等的方程组,解析求解出电池光电流、理想因子、反向饱和电流、串联和并联电阻5个电性参数.结果表明该方法的均方根误差为0.0047A,平均绝对相对误差为0.94%;证明了该方法的正确性.该方法应用于变光强下磷化铟镓/砷化铟镓/锗(In Ga P/In Ga As/Ge)三结太阳电池参数的提取,结果表明提取误差随着光强的增大而下降;原因是随着光强增大,噪声对测量的影响下降导致.且发现光电流随光强的增加而几乎线性增加,而理想因子、反向饱和电流、串联和并联电阻都随光强增加而下降;原因是当光强增加时,入射光子数线性增加、费米能级抬高、空间复合减少、分流路径增加导致的.Based on the Lambert W function and polynomial curve fitting, a new method of solar cell five-parameter extraction is presented. This method first uses the Lambert W function to obtain the explicit analytical solution of the transcendental I-V equations of solar cells, and then derives its integral form. Second, based on the similarity between the characteristic of the cell's output curve and the trajectories of the horizontal projectile motion, a three-stage polynomial curve fitting method is used to obtain the cell's current-voltage relationship in the integral form. Finally, the solar cell photocurrent, the ideality factor, the reverse saturation current, the series resistance, and the shunt resistance are calculated from simultaneous equations created by applying the measured values. We use this method to analyze previously published experimental data and the results had a root mean square error of less than 0.0047 A and a mean absolute percentage error of less than 0.94%, which verifies the method. When the method was applied to an InGaP/InGaAs/Ge triple-junction solar cell under variable light intensity, all errors decreased when the irradiance intensity increased. This may be the result of the weakening influence of the noise as the light intensity increased. We also found that the photocurrent increased with increased light intensity while the ideaiity factor, the reverse saturation current, the series resistance, and the shunt resistance decreased steadily with increasing light intensity. We infer that the increased number of incident photons causes the Fermi level in the depletion region to shift and reduces the number of recombination centers; thus, the pathway to electricity generation increases with increasing light intensity.
分 类 号:TM914.4[电气工程—电力电子与电力传动]
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