通道效应在透射电镜样品厚度估测中的应用  

Application of channeling effect in estimating the thickness of TEM sample

作　　者：李月亮[1] 朱静[1] 

机构地区：[1]清华大学北京电子显微镜中心材料学院新型陶瓷和先进工艺国家重点实验室先进材料教育部重点实验室,北京100084

出　　处：《电子显微学报》2014年第6期487-494,共8页Journal of Chinese Electron Microscopy Society

基　　金：国家973项目(No.2015CB654902);国家自然科学基金资助项目(Nos.11374174,51390471)

摘　　要：通道效应是出射波函数的样品厚度周期效应。像差校正高分辨像中像点强度随样品厚度的变化正是这种效应的直接体现。本文提出了利用通道效应估测样品厚度的方法,通过多片层法高分辨像模拟,研究了元素种类、离焦量、像散以及带轴偏离等参量对于厚度估测的影响,并以钛酸钡陶瓷样品为实例,对厚度进行了估测。Channeling effect is the periodic thickness effect of exit wave function, causing the column intensity in aberration-corrected HRTEM image periodically changing as the thickness of TEM sample increases. In this work, we proposed a method of estimating the thickness of TEM sample by channeling effect. Influences of parameters, such as element, defocus, astigmatism and tilt, were studied by multi-slice simulation. Thethickness of BaTiO3 ceramic sample was estimated as an example.

关 键 词：通道效应 像点强度 负球差成像 样品厚度估测 多片层法像模拟 

分 类 号：TN16[电子电信—物理电子学] O652.4[理学—分析化学]