水热法制备SiNWs@MoS_2核壳阵列结构  

Preparation of SiNWs@MoS_2 Core-Shell Structure Array Through Hydrothermal Method

作　　者：贺小兰 廖明佳 揭芳芳 乔雷[2] 

机构地区：[1]重庆化工职业学院化学工程系,重庆400020 [2]重庆市环境科学研究院,重庆401147

出　　处：《材料导报（纳米与新材料专辑）》2014年第2期63-66,共4页

基　　金：重庆市教委科学技术研究项目资助(KJ133801)

摘　　要：通过水热法成功地对金属无电刻蚀法制备的硅纳米线进行了MoS2包覆,实现了硅纳米线@MoS2的核壳化。制得的硅纳米线@MoS2阵列的电化学反应电流密度较未修饰的硅纳米线阵列提升了近6倍,EIS结果显示硅纳米线@MoS2阵列的转移电荷电阻仅是硅纳米线阵列的1/2。SiNWs@MoS2阵列的制备为电学、光学、力学等方面的研究提供了新的平台。Through hydrothermal method MoSz was coated on silicon nanowires which were prepared by metalcatalyzed electroless etching method. The electrochemical reaction current density of silicon nanowires@MoS2 array was 6 times higher than bare silicon nanowires. EIS results showed that the charge transfer resistance of silicon nanowires@MoS2 array was only 1/2 of silicon nanowire arrays. SiNWs@MoS2 arrays-core/shell structure provided a new research platform for the study of electrical, optical, mechanical etc.

关 键 词：硅纳米线阵列 二硫化钼 核壳结构 水热法 

分 类 号：TB332[一般工业技术—材料科学与工程]