掺杂Zr对Bi_4Ti_3O_(12)铁电薄膜性能的影响  

Influence of Zr Substitution of Bi_4Ti_3O_(12) Thin Film to Ferroelectric Properties

作　　者：郭淑兰[1] 李佳 吕苏华 

机构地区：[1]长春工程学院机电学院,长春130000 [2]宁波材料研究所,浙江宁波315000

出　　处：《功能材料与器件学报》2014年第5期155-157,共3页Journal of Functional Materials and Devices

摘　　要：本文采用x射线衍射法对溶胶-凝胶法备制B位掺杂Zr的铁电薄膜Bi3.15Nd0.85Ti3-xZrxO12。对所制备的薄膜进行XRD测试、疲劳分析及铁电性能分析。结果表明:对BNT进行B位Zr4+掺杂后,随着掺量的增加,BNTZ薄膜的剩余极化值逐渐增加,当x=6%时达到最大,随后随着Zr掺量的继续增加,剩余极化值开始减小,而矫顽电压Vc值几乎没有什么变化;掺杂了Zr薄膜的疲劳特性均比未掺杂的BNT薄膜的要差一些。Ferroelectric thin films Bi3.15 Ndo. 85 Ti3 - x Zrx O12 of B - site Zr substitution of Bi4 Ti3 O12 were fabricated by sol - gel method in the paper. Test and analysis of B - site Zr substituted BNT thin films （BNTZx） were done. The results show that residual polarization of BNTZ by Zr Substitution increased with the content of Zr^4＋ increasing first,it was the maximum when Zr^4＋ is 6% ,then it was decreased with the content of Zr^4＋ increasing. But coercive voltage Vc has not nearly changed. Anti fatigue performance Of feiToelectric thin films Bi3.15 Nd0. 85 Ti3- x Zrx O12 of B - site Zr substitution got the worst result than Bi4Ti3 O12 Thin Film.

关 键 词：薄膜 溶胶-凝胶法B位掺杂 

分 类 号：TB24[一般工业技术—工程设计测绘] TB330.1