放电等离子烧结致密单相钛三铝碳二的反应机理  

Reaction Mechanism of High Quality and Density Titanium Aluminum Carbide Ceramics Prepared by Spark Plasma Sintering

作　　者：苟波[1] 梁波[1] 靳喜海[2] 

机构地区：[1]燕山大学亚稳材料制备技术与科学国家重点实验室,河北秦皇岛066004 [2]中国科学院上海硅酸盐所,上海200050

出　　处：《硅酸盐学报》2014年第7期926-931,共6页Journal of The Chinese Ceramic Society

基　　金：国家973项目资助项目(2010CB731600)

摘　　要：以3Ti/1.1Al/1.9C混合粉末为原料,采用放电等离子烧结(SPS)技术,利用X射线衍射仪、扫描电子显微镜和透射电子显微镜等分析方法,研究了致密单相Ti3AlC2三元层状化合物的合成机理,详细探讨了烧结温度对产物合成的影响,提出了一种SPS制备致密单相Ti3AlC2的反应机理。结果表明:利用SPS技术,在1 350℃保温10min的条件下,可以获得致密度大于99%的层状致密单相Ti3AlC2材料。最终产物中TiC的残留与原料中C含量有密切关系,适当降低原料中C含量有利于最终产物中TiC的消除。致密单相三元层状化合物Ti3AlC2的合成过程中,AlTi3和TiAl是形成TiC和Ti2AlC的主要中间相,而Ti3AlC2是由TiC与Ti2AlC反应生成的。The ternary compound Ti3 A1C2 was synthesized with 3Ti/1, 1A1/1.9C powders as raw materials via spark plasma sintering. The effect of sintering temperature on the structure and the reaction mechanism was investigated by X-ray diffraction （XRD）, scanning electron microscopy （SEM） and transmission electron microscopy （TEM）, respectively. The results show that the high quality and dense TiaA1C2 can be obtained at 1 350 ℃ for 10 mirL The reaction mechanism was proposed. The C content in raw materials is related to the formation and decomposition of TiC. The decrease of the C content in raw materials can favor the formation of high quality Ti3 AIC4. A1Ti3 and TiAI are main intermediate phases for the formation of TiC and Ti2 A1C. Ti3 A1C4 can be formed due to the reaction between TiC and Tiz A1C.

关 键 词：钛三铝碳二 放电等离子烧结 反应机理 致密单相 

分 类 号：TQ174[化学工程—陶瓷工业]