磷锗锌晶体生长与缺陷结构  

Growth and Defect Structure of Zinc Germanium Phosphide Crystal

作　　者：雷作涛[1] 朱崇强[1] 宋梁成 杨春晖[1] 谷立山[2] 

机构地区：[1]哈尔滨工业大学化工学院,哈尔滨150001 [2]中国科学院长春光学机密机械与物理研究所,长春130033

出　　处：《硅酸盐学报》2014年第8期1082-1086,共5页Journal of The Chinese Ceramic Society

基　　金：国家自然科学基金(91022024)资助

摘　　要：采用水平双温区法批量合成了高纯ZnGeP2多晶,并用垂直Bridgman法生长出直径为40～50mm的高品质单晶。采用密度泛函理论分析了ZnGeP2晶体中可能存在的点缺陷对其近红外波段透光性的影响,认为V-Zn和Zn0Ge缺陷的影响最大。利用X射线衍射形貌术对晶体中存在的位错、层错、孪晶界、包裹体等微缺陷进行了分析,结果表明,温度场稳定性和固液生长界面形态是缺陷形成的主要因素。A high-purity ZnGeP2 polycrystalline material was synthesized by two-temperature zone technique. The single crys- tals with the diameter of 40-50 mm were grown by a vertical Bridgman technique. The possible point defects in the ZnGeP2 crystal and its influence to the near-infrared light transmittance of crystal were investigated via the density functional theory calculation. The results showed that V~ defects gave the greater optical losses than other point defects. According to the anal- ysis by X-ray diffraction topography, there exist the microdefects, i. e. , dislocation, stacking fault, twin boundary, inclusion, etc. It is indicated that the temperature field stability and the growth interface shape are the crucial factors affecting the crystal growth.

关 键 词：磷锗锌晶体 缺陷结构 垂直Bridgman法 吸收光谱 

分 类 号：O771[理学—晶体学]