微拉曼光谱法检测非制冷红外焦平面阵列残余应力  

RESIDUAL STRESS ANALYSIS OF UNCOOLED INFRARED FOCAL PLANE ARRAYS BY MICRO-RAMAN SPECTROSCOPY

作　　者：岑皓[1] 王克用[2] 

机构地区：[1]天津外国语大学基建处,天津300270 [2]上海工程技术大学机械工程学院,上海201620

出　　处：《机械强度》2015年第1期68-73,共6页Journal of Mechanical Strength

基　　金：上海工程技术大学校基金项目(2012-gp04)资助~~

摘　　要：实验所采用的非制冷红外焦平面阵列由Si O2薄膜和硅基底组成,具有MEMS微结构。热氧化生成Si O2薄膜过程中会因热失配和晶格失配而产生很大的残余应力,其大小影响微元件的整个性能,对其检测至关重要。利用微拉曼光谱法对两个Si O2薄膜/硅基微结构的进行了残余应力检测。实验结果表明,硅层横截面上残余应力随着深度的增大而递减,近似成二次曲线分布,并结合力平衡概念和微积分方法,计算出两个试样的薄膜残余应力大小分别为3.3 GPa和2.2 GPa。对薄膜微小单元体进行应力分析,得出薄膜残余应力为压应力。在应力释放过程中,达到GPa量级的残余应力会使薄膜皱曲、弯曲,产生鼓峰,甚至会造成膜层的破坏失效。The uncooled infrared focal plane arrays（UIRFPA） used in this micro-Raman experiment are composed of SiO2 thin film and Si substrate. They have the characteristic of MEMS microstructure. The process of the thermal oxidation may lead to the residual stress on account of thermal ecpansion coefficient mismatch and lattice mismatch. Residual stress in thin film has an important effect on the properties of the micro-elements. Therefore, it is necessary to measure the fihn residual stress. The residual stress in two SiO2 thin film/Si substrate has been investigated by using micro-Raman spectroscopy （MRS）. The results show that the residual stress along the cross - section of the Si substrate is a quadric decrease along with an increase in the depth. By means of the force equilibrium and infinitesimal calculus, the residual stress in thin flim can reach 3.3GPa and 2. 2GPa respectively for two samples. Then it can be concluded that residual stress in thin flim is compressive considered the analysis of flim micro-element. In the releasing process of the residual stress, it may make film fold, bend, bulge, and even cause disorder for the film sample when the residual stress reaches GPa level.

关 键 词：微拉曼光谱法 非制冷 焦平面阵列 残余应力 薄膜 

分 类 号：TB302.3[一般工业技术—材料科学与工程] TB43