Yb：YxLu1-xVO4混合激光晶体中的缺陷研究  

Crystal Defects in Yb: Y_xLu_(1-x)VO_4 Mixed Laser Crystal

作　　者：钟德高[1,2,3] 滕冰[1,2] 孔伟金[1,2] 姜学军[1,2] 张世明[1,2] 李煜燚 黄万霞[4] 

机构地区：[1]青岛大学物理科学学院,山东青岛266071 [2]山东省高校光子学材料与技术重点实验室,青岛大学,山东青岛266071 [3]青岛大学复杂性科学研究所,山东青岛266071 [4]中科院高能物理研究所北京同步辐射实验室,北京100039

出　　处：《中国稀土学报》2015年第1期53-59,共7页Journal of the Chinese Society of Rare Earths

基　　金：国家自然科学基金项目(11204148,11274188,11374170);山东省优秀中青年科学家奖励基金项目(BS2013CL024)资助

摘　　要：采用提拉法生长出了Yb:YxLu1-xVO4混合晶体,XRD测试发现该晶体具有四方Zr Si O4结构,经计算晶胞常数为a=b=0.7126(2)nm,c=0.6259(7)nm。利用化学腐蚀法和同步辐射X射线形貌术,分析了晶体中的缺陷,发现位错和小角度晶界是晶体中的两种主要缺陷。利用Read-Shockley公式计算分析了晶体中的转向小角度晶界,发现Yb:YxLu1-xVO4晶体中存在伯格斯矢量为[100]的位错。分析了晶体中位错和小角度晶界的形成原因,认为晶体生长和退火过程中的温度波动容易在Yb:YxLu1-xVO4晶体内部引起局部晶格畸变,诱发位错和小角度晶界的产生,因此混合晶体生长过程需要更精确控制。Mixed Yb ：YxLU1-xVO4 crystal was grown by Czochralski method. XRD showed that this crystal possessed tetragonal ZrSiO4 structure. The lattice parameters are a = b =0. 7126（2） nm, c =0.6259（7） nm. Crystal defects were revealed by chemical etching and Synchrotron Radiation X-ray Topography. It was found that dislocations and low angle grain boundaries were dominated defects. Read-Shockley formula was used to analyze the low angle grain boundaries that changed in directions. It was found that there were dislocations with Burgers vector [ 100 ] in mixed Yb：YxLu1-xVO4 crystals. The formation reasons of dislocations and low angle grain boundaries were discussed. It is believed that the temperature fluctuation during crystal growth and annealing heat treatment, gave rise to the lattice deformation, which might induce dislocations and low angle grain boundaries. Thus, the processes of mixed crystal growth need more accurate control.

关 键 词：Yb:YxLu1-xVO4混合晶体 晶体缺陷 激光晶体 同步辐射X射线形貌术 稀土 

分 类 号：O782[理学—晶体学] O771