并联型忆阻器混沌电路设计  

Parallel chaotic circuit based memristor

作　　者：谭志平[1] 卢鑫 曾以成[1] 李鑫[1] 

机构地区：[1]湘潭大学光电工程系,湖南湘潭411105 [2]湖南华南光电集团,湖南常德415007

出　　处：《电子元件与材料》2015年第2期50-53,共4页Electronic Components And Materials

基　　金：国家自然科学基金资助项目(No.61233010;No.61176032);湖南省研究生创新资助项目(No.CX2014B261)

摘　　要：利用磁控忆阻器、电感和电容三个元件并联设计了一种新型忆阻器混沌电路。采用常规的动力学分析方法研究了系统的基本动力学特性,例如相图、平衡点稳定性分析、李雅普诺夫指数谱和分岔图。结果表明该系统产生了一类特殊混沌吸引子,且随系统参数改变,系统可以产生丰富的混沌行为。为验证电路混沌行为,利用Pspice进行了相应的电路仿真,仿真结果与理论分析、数值仿真基本一致。A novel parallel memristor chaotic circuit was constructed by a flux-controlled memristor, an inductance, a capacitance. The dynamic properties of the circuit were demonstrated by means of phase diagrams, equilibrium stability, Lyapunov exponent spectra and bifurcation diagrams. Numerical simulation results show that the system produces a class of special chaotic attractors and exhibits complicated chaotic behaviors with the evolution of the system parameters. In order to confirm the proposed occurrence of chaotic behavior in the circuit, an analog Pspice implementation of this circuit was presented. The simulation results are well consistent with theoretical analysis and numerical simulation results.

关 键 词：忆阻器 混沌 并联 相图 分叉图 数值仿真 

分 类 号：TP309.7[自动化与计算机技术—计算机系统结构] O241.84[自动化与计算机技术—计算机科学与技术]