一种带曲率补偿的低温漂低功耗带隙基准源设计  

Design of low temperature drift and low power consumption bandgap reference source with curvature compensation

作　　者：张龙[1] 冯全源[1] 王丹[1] 

机构地区：[1]西南交通大学微电子研究所,四川成都610031

出　　处：《电子元件与材料》2015年第2期62-65,共4页Electronic Components And Materials

基　　金：国家自然科学基金资助项目(No.61271090);国家高技术研究发展计划(863计划)重大资助项目(No.2012AA012305)

摘　　要：基于OKI(冲电气工业株式会社)0.5μm BCD(Bipolar,CMOS and DMOS)工艺,设计了一种带曲率补偿的低温漂低功耗带隙基准电压源。采用放大器钳位的传统实现方式,将一个类指数性质的电流叠加到基准源的核心部分,达到曲率补偿的效果。仿真结果表明,在5 V供电电压下,223~423 K(–50^+150℃)内,基准电压的波动范围为1.175~1.182 V,温漂为2.15×10–6/K,具有较高精度,低频时电路电源抑制比为–64 d B,整体静态电流仅为5.6μA。Based on OKI 0.5μm BCD process, a low temperature drift and low power consumption bandgap reference voltage source with curvature compensation was designed. With traditional amplifier clamping method, a quasi exponent property current was added up the core part of the reference to achieve curvature compensation effect. Simulation results show that under the power supply voltage of 5 V from 223 K to 423 K, the output reference voltage range is from 1.175 V to 1.182 V, with a temperature drift of about 2.15×10^–6/K. The power supply rejection ratio （PSRR） is–64 dB when the reference source is high precision and low frequency;the static current of the reference source is only 5.6μA.

关 键 词：带隙基准源 曲率补偿 低温漂 低功耗 高精度 放大器钳位 

分 类 号：TN43[电子电信—微电子学与固体电子学]