双层SiN_x∶H减反膜多晶硅太阳电池及其组件性能研究  

POLYCRYSTAL Ll INE SOLAR CELL WITH DOUBLE SiN_x∶H ANTI-REFLECTION FILM AND ITS MODULES PERFORMANCE

作　　者：石强[1] 单伟[1] 胡金艳[1] 韩玮智[1] 牛新伟[1] 蒋前哨 李永辉[1] 仇展炜 

机构地区：[1]浙江正泰太阳能科技有限公司,杭州310053

出　　处：《太阳能学报》2015年第1期108-112,共5页Acta Energiae Solaris Sinica

摘　　要：利用管式PECVD在多晶硅片上获得钝化效果和减反性能优异的双层SiNx：H薄膜，其中底层和顶层SiN；折射率分别为2．35和2．01，膜厚为17nm和67nm。薄膜的折射率通过改变反应气体的Si／N比进行调控，底层SiN，制备时Si／N比越大，反射率越低，而电池Jsc先增加后下降。反射率曲线、外量子效率（EQE）和电学性能表明，和单层膜相比，双层膜的短波部分（300—650nm）反射率远低于单层膜；其电池在680～950nm波段光谱响应较单层膜稍好；电池Uoc和Isc均有较大提升，光电转换效率绝对值提高了0.193％。同时，双层膜电池组件的封装功率损失略低于单层膜电池组件。Double layer SiNx： H film which has outstanding passivation and anti-reflection performance was manufactured through depositing on polycrystalline wafer by tube PECVD. The refractive index of bottom and top layer are 2.35 and 2.01; the thicknesses of the two layers are 17 nm and 67 nm, respectively. The refractive index is controlled by adjusting Si/N ratio in reactive gas： as Si/N ratio while preparing bottom layer increases, the reflectance becomes lower, and Jsc of solar cell increases frst but then decreases. Compared with single layer SiNx ： H film, the reflectance curve, external quantum efficiency（EQE）and electrical properties show that the reflectance in short-wave（300-650 nm） spectral is much lower than single layer. The spectral response of solar cell is slightly better than single layer at 680-950 nm; Uoc and Isc of double layer solar cell improve greatly while the photo-electric conversion efficiency increases by 0.193%. Moreover, the power loss of double layer solar cell modules is slightly lower than the single layer cell modules.

关 键 词：双层SiN :H薄膜 钝化 管式PECVD 功率损失 

分 类 号：TK513.5[动力工程及工程热物理—热能工程]