磁控溅射制备CdS/ZnO复合薄膜及其光电性能研究  

Fabricating CdS / ZnO heterostructured film photoelectrode for visible light photoelectrochemical applications

作　　者：彭廉钦 田晶[1] 王域[1] 陈金伟[1] 王瑞林[1] 

机构地区：[1]四川大学材料科学与工程学院,四川成都610065

出　　处：《西南民族大学学报（自然科学版）》2015年第1期77-82,共6页Journal of Southwest Minzu University(Natural Science Edition)

基　　金：国家自然科学基金(21306119);四川省科技支撑计划(2013FZ0034;2013JY0150);高等学校博士学科点专项科研基金(20110181110003)

摘　　要：采用射频磁控溅射两步法制备出CdS/ZnO复合膜,并通过XRD、SEM、AFM、UV-vis、IPCE表征了制备的薄膜.SEM及AFM测试表明,相比于单独的CdS薄膜,CdS/ZnO复合膜的表面形成了更加明显的介孔结构;光电转换效率测试表明,相比单独的CdS薄膜,CdS/ZnO复合膜表现出更高的光电转换效率,0V(vs.Ag/Ag Cl)偏压下,IPCE值由36.1%(410nm)增大到66.1%(410nm).光电转换效率的增加一方面是由介孔表面引起的光吸收增加以及表面活性位增多引起;另一方面,两种半导体的复合形成异质结,异质结的形成促进了光生电子-空穴的分离,提高了薄膜的光电转换效率.CdS / ZnO heterostructured films were prepared in two steps on FTO（ fluorine- doped tin oxide） glass substrates by magnetron sputtering. The films were characterized by using X- ray diffraction（ XRD）,scanning electron microscopy（ SEM）,atomic force microscopy（ AFM）,and UV- visible absorbance spectra. The SEM and AFM characterizations indicated that a rough nanoporous surface was generated when the CdS grown on the ZnO under layer,while the films grown on FTO showed a compact surface. The photoelectrochemical（ PEC） properties of CdS / ZnO heterostructured films were carried out in a convenient three electrodes cell with 0. 5 M Na2SO3 aqueous solution. Compared with single CdS electrode,the heterostructured CdS /ZnO electrode can effectively suppress photogenerated electron- hole recombination and enhance light harvesting. Therefore,the CdS / ZnO electrode gave lager IPCE（ incident photon- to- electron conversion efficiency） and APCE（ absorbed photon- to-electron conversion efficiency） value. Their IPCEs were 36. 1%（ 410nm） and 66. 1%（ 410nm） at 0 V bias（ vs. Ag / Ag Cl） in a 0. 5 M Na2SO3 aqueous solution electrolyte.

关 键 词：CdS/ZnO 异质结 介孔结构 光电转换效率 电荷分离 光解水 

分 类 号：TB383[一般工业技术—材料科学与工程]