GaN与Si器件作为辐伏电池换能单元性能比较  

Analysis on electrical performance of Ga N and Si diodes as betavoltaic batteries energy converters

作　　者：王关全[1] 杨玉青[1] 胡睿[1] 刘业兵[1] 熊晓玲[1] 罗顺忠[1] 

机构地区：[1]中国工程物理研究院核物理与化学研究所,绵阳621900

出　　处：《核技术》2015年第2期22-26,共5页Nuclear Techniques

摘　　要：利用63Ni和3H源等分别辐照两种可作为辐伏电池换能单元的GaN基和Si基PiN结型器件,比较了他们的输出电性能结果,以及两种器件的温度、辐照性能等。结果表明,GaN器件开路电压Voc比Si基器件有非常明显的提高,而短路电流Isc有较大下降;GaN基结型器件在高温和高能辐照条件下的性能比Si基结型器件有较大优势。Background： Betavoltaic battery is a hot spot in micro isotope batteries due to its advantages of small volume, maintenance-free, high energy conversion efficiency, ease of integration and so on. GaN is a promising wide bandgap semiconductor for energy converter of betavoltaic battery. Purpose： This study aims to explore the performance of GaN diode as the energy converter of betavoltaic battery, and to compare it with the performance of Si diode. Methods： Two kinds of GaN and Si PiN diodes were prepared to be the energy converters of betavoltaic batteries, and irradiated by 63Ni and 3H radioactive sources. Their electrical performances, temperature and irradiation tolerance, were compared. Results： The results showed that the Voc of GaN diode was higher than that of Si diode, while Isc was lower; the electrical performance of GaN diode under the conditions of high temperature and high energy irradiation were better than that of Si diode. Conclusion： GaN diode could increase the Voc of betavoltaic battery, and improve electrical performance under high temperature and high energy irradiation conditions.

关 键 词：辐伏同位素电池 GAN器件 Si器件 电输出性能 

分 类 号：TL82[核科学技术—核技术及应用]