HfAlO_x/γ-Fe_2O_3/HfAlO_x纳米堆栈结构的电阻开关特性  

Resistive switching properties of HfAlO_x/γ-Fe_2O_3/HfAlO_x stacked structures

作　　者：郑烨[1] 张祎杨 朱华星 王瑞雪[1] 张道扬 邱晓燕[1] 

机构地区：[1]西南大学物理科学与技术学院,重庆400715

出　　处：《中国科学：物理学、力学、天文学》2015年第3期75-82,共8页Scientia Sinica Physica,Mechanica & Astronomica

基　　金：国家自然科学基金(批准号:11274257);重庆市自然科学基金(编号:cstc2014jcyjA40029);中央高校基本科研业务费专项资金(编号:XDJK2014B043);西南大学本科生科技创新基金(编号:1318003)资助项目

摘　　要：本文用磁控溅射和旋涂法成功制备了HfAlOx/γ-Fe2O3/HfAlOx堆栈结构,该堆栈结构具有典型的双极性电阻开关特性:在-1V读取电压下可获得高达90的高/低电阻态阻值比,该比值可稳定维持近50个循环周期,远优于相同条件下制备的γ-Fe2O3纳米微粒薄膜.线性拟合电流-电压对数曲线结果表明,低电阻态时,样品漏电流特性满足欧姆隧穿机制;高电阻态时,低电场下的漏电流以缺陷主导的空间电荷限制隧穿电流为主,高电场下为串联内置电阻的欧姆隧穿电流;该堆栈结构的电阻开关特性是"体导电细丝通道"和"电场作用下界面势垒改变"共同作用的结果.100 nm Hf lOx/300 nm γ-Fe2O3/100 nm Hf Al Ox stacked structures have been fabricated by radio frequency magnetron sputtering combined with spin-coating methods. This stacked structure exhibits typical bipolar resistive switching memory characteristics： the ratio of high and low resistance at the reading voltage of -1V is bigger than 90, and can be well maintained during nearly 50 switching cycles, which is much better than that of γ-Fe2O3 nano-particle films fabricated under the same conditions. The logarithmic plots and power-law fittings for current-voltage log curves demonstrate that an ohmic conduction process is dominated on the low resistance state. While on the high resistance state, a trap-controlled space-charge limited current conduction process is responsible for the current transport when applying a low electric field and an ohmic conduction process with an internal resistor in series is worked when applying a relatively high electric field. Both ＂filamentary conducting paths＂ and ＂interface potential barrier change induced by the electric field＂ are responsible for the resistive switching： the drift of oxygen ions in γ-Fe2O3 nano-particle films results in the formation and annihilation of filamentary conducting paths composed by oxygen vacancies, and the HfAlOx layer not only improves the surface roughness of γ-Fe2O3 nano-particle films, but also increases the interface potential barrier, thus increases the effective resistance of the sample on the high resistance state and the stability of the resistive switching.

关 键 词：γ-Fe2O3纳米微粒 HfAlOx薄膜 电阻开关特性 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]