真空退火对Co/Ru多层膜磁阻性能的影响  

Effect of Magnetic Reluctance of Co/Ru after Annealing

作　　者：郝安林[1] 

机构地区：[1]安阳工学院学报编辑部,河南安阳455000

出　　处：《河南师范大学学报（自然科学版）》2015年第1期54-58,共5页Journal of Henan Normal University(Natural Science Edition)

基　　金：国家自然科学基金青年项目(51105002)

摘　　要：采用超高真空电子束蒸镀的方法制备了Co/Ru金属多层膜,通过透射电镜、X射线衍射分析等结构分析仪器、磁性测试手段对薄膜的、微观与局域结构及磁性进行了研究.对Co/Ru多层膜样品进行真空退火处理,研究了退火后界面的变化及其对磁性和磁电阻性能的影响.退火增加了多层膜界面与表面的粗糙程度.Co/Ru界面处的互扩散和混合程度逐渐增大,多层膜的周期性有所降低.随着退火温度的升高,负磁阻逐渐减小,同时高场下开始出现正磁阻.We prepare the Co/Ru multilayers by electron-beam evaporation. The microstructure as well as the magnetic behaviors of the films are studied. The variation of interfaces and affection of magnetic property and magnetic reluctance （MR） of Co/Ru after annealing were studied in this paper. This post-deposition annealing has increased the surface roughness of these samples. The LAXRD of the post-annealed samples （not shown） reveal that the quality of the periodical structure is decreased. The negative MR of the multilayer decreased gradually and the positive MR was observed in the high magnetic field with the increased temperature.

关 键 词：真空退火 多层膜 磁电阻性能 

分 类 号：O484[理学—固体物理] TB383[理学—物理]