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作 者:韩文彬[1,2] 冯涓[1,2] 武园浩[1,2] 段文睿[1,2]
机构地区:[1]清华大学机械工程系,北京100084 [2]清华大学精密超精密制造装备及控制北京市重点实验室,北京100084
出 处:《真空科学与技术学报》2015年第1期38-43,共6页Chinese Journal of Vacuum Science and Technology
基 金:国家科技部重大专项资助项目(No.2011ZX02403)
摘 要:针对传统基于连续流假设的N-S方程无法准确描述约束环内稀薄气体问题,采取二次优化策略,确定了CFD-ACE+中基于努森数的粘度修正公式参数a、b的最优值分别为0.12和1.40。对约束环内气体流动进行模拟仿真,结果表明:利用本文中的粘度修正公式,可以使约束环内稀薄气体的模拟仿真结果与实验测量值相一致,该公式在较宽的入口流量范围(200—2000mL/min之间)内应用均可控制仿真结果的相对偏差在±3%之内,其精度满足实际工程需要;并且,获得粘度修正公式参数的方法同样适用其它微通道内稀薄气体的研究,对相同工况下类似刻蚀腔室内气流仿真、新机型设计等亦有很大的指导意义。The viscosity correction coefficients of the ratified gas passing through the confinement ring in plasma etching reactor were determined by quadratic optimization, based on Kn-dependent gas viscosity correction model, recom- mended by CFD-ACE + simulation software,and the continuum assumption of gas flow field. The two parameters, a and b,were experimentally evaluated and optimized to be 0.12 and 1.40, respectively. The pressure distribution, with the mass flow-rates ranging from 200 to 2000 mL/min at the inlet of the reactor, was numerically simulated with the newly-de- rived gas viscosity correction coefficients. The simulated and measured pressures were found to be in good agreement, with a relative discrepancy of + 3 %. We suggest that the newly-developed gas viscosity correction technique may be of much technological interest in design and application of the devices resembling the plasma etching reactor.
分 类 号:TN405.98[电子电信—微电子学与固体电子学]
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