Impact of TID on response to pulsed X-ray irradiation in the bipolar operational amplifier  

作　　者：LI Rui Bin WANG Gui Zhen CHEN Wei MA Qiang LIU Yan LIN Dong Sheng YANG ShanChao BAI XiaoYan QI Chao JIN XiaoMing 

机构地区：[1]State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology

出　　处：《Science China(Technological Sciences)》2015年第2期390-396,共7页中国科学（技术科学英文版）

基　　金：supported by the State Key Laboratory Foundation(Grant No.SKLIPR1212)

摘　　要：Groups of a typical operational amplifier-μA741 were irradiated in a cobalt unit, each group accumulating a different total ionizing dose （TID）. The results showed that the TID caused power consumption current and slew rate （SR） to degenerate in ultra-linearity, owing to a severe reduction in the current gain of the internal LPNP transistors. Pulsed X-ray irradiation experiments were carried out on the μA741 groups with different values, and the results revealed that the impact on the response to the pulsed X-ray irradiation was greater when the devices absorbed more TID. The mechanism for this is explained on the basis of the circuit construction of the μA741; the sensitive parameters of the circuit were obtained via simulation on SP1CE. The simulation results additionally showed that if the sensitive parameters were optimized, the duration of interruption caused by the pulsed X-ray irradiation would be reduced significantly. In addition, several proposals are provided for hardening the devices.

关 键 词：TID pulsed X-ray irradiation operational amplifier simulation 

分 类 号：TN722.77[电子电信—电路与系统] X591[环境科学与工程—环境工程]